Featured Model

Last updated:

SSM6K504NU-VB Product details

Product introduction:

The SSM6K504NU-VB is a Single N-MOSFET deeply optimized for low-voltage power switching applications. The Trench process balances low switching loss with high reliability. The DFN6(2X2) package achieves a balance between an ultra-small footprint and good thermal dissipation. The combination of 30V withstand voltage, 10A current capability, and 17mΩ on-resistance makes it an ideal high-density alternative to traditional SOT23 or SOP-8 packaged devices, particularly suitable for space-constrained portable and communication applications.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN6(2X2) Single-N 30V 1.5V 10A 21(mΩ) 17(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN6(2X2) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN6(2X2) Single-N 30V 1.5V 10A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN6(2X2) Single-N 30V 1.5V 10A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN6(2X2) Single-N MOS

VDS=30V: Suitable for 5V/12V/24V systems, providing ample margin for voltage spikes, reducing avalanche breakdown risk.
VGS=±20V: Compatible with 1.8V~12V logic levels, can be directly connected to MCU/PMIC, eliminating the need for level-shifting circuits.
Vth=1.5V (typical): Can still enter the fully enhanced region with low-voltage drive, especially suitable for battery voltage decay scenarios.
RDS(on)=17mΩ @ VGS=10V: Ultra-low on-resistance significantly reduces temperature rise under full load, potentially reducing the need for large copper areas for heat dissipation; typical value is 21mΩ @ VGS=4.5V, maintaining low loss even under low-voltage drive.
ID=10A: Ample continuous current margin to handle peak demands of most portable and automotive auxiliary loads.
Package DFN6(2X2): Small size, low parasitic parameters, supports high-frequency switching, significantly saves PCB space, suitable for ultra-thin module designs.

Domain and module applications:


Portable Device Power Management: Low on-resistance improves boost/buck efficiency, extending battery life; small package aids ultra-thin design.
Battery Protection Modules: Fast response ensures microsecond-level turn-off during overcurrent/short circuit; low on-resistance reduces self-heating of the protection board.
Low-Voltage Motor Drives: Low PWM switching loss, smoother motor operation, significantly reduced controller temperature rise.
Consumer Electronics Control Modules: Direct drive by logic level simplifies external circuitry, suitable for high-volume, low-cost products like smart plugs and USB switches.
LED Lighting Drives: Low conduction voltage drop reduces constant current source power loss, supports multi-channel parallel connection, improving overall luminaire efficacy.
DC-DC Converters: Replaces Schottky diodes in synchronous rectification, improving heavy-load efficiency by 2~3%, facilitating module miniaturization.
Wireless Charging and Fast Charger Adapters: The DFN6 small package combined with low-loss characteristics is suitable for high-power-density power supply designs.

Selection Summary: The SSM6K504NU-VB achieves a balance between performance margin, package size, and system cost. It is a cost-effective general-purpose choice for 30V low-voltage switching applications, especially suitable for projects with strict space and thermal requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat