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FDMA291P-VB Product details

Product introduction:

** The FDMA291P-VB is a small-sized, high-current P-Channel MOSFET in a DFN6(2X2) package, with -20V withstand voltage and -10A current capability. Enhanced by Trench technology, its on-resistance is as low as 20mΩ (at 10V drive), resulting in low heat generation and high efficiency. The gate drive is flexible with a wide ±20V range, suitable for most low-voltage control scenarios.**

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN6(2X2) Single-P -20V -0.6V -10A 40(mΩ) 28(mΩ) 20(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN6(2X2) Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN6(2X2) Single-P -20V -0.6V -10A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN6(2X2) Single-P -20V -0.6V -10A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN6(2X2) Single-P MOS

- Voltage: -20V
- Drive Voltage: ±20V
- Threshold Voltage: -0.6V
- On-Resistance: 20mΩ (10V drive) / 28mΩ (4.5V drive) / 40mΩ (2.5V drive)
- Maximum Current: -10A
- Package: DFN6(2X2)
- Technology: Trench
**

Domain and module applications:


- Battery Charge/Discharge Protection → Safe shutdown, extends battery life
- Portable Device Power Supply → Low losses, longer battery life
- Load Switch → Clean on/off, no heat generation
- DC-DC Module → Synchronous rectification, better efficiency
- Motor Drive → Flexible speed control, fast response
- Power Management → Small size, easier high-density board layout
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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