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SSM6J512NU-VB Product details

Product introduction:

The SSM6J512NU-VB is a Single P-MOSFET deeply optimized for low-voltage power switching scenarios. The Trench process balances low switching losses with high reliability. The DFN6(2X2) package achieves a balance between thermal dissipation and footprint. The combination of 20V voltage rating, 10A current capability, and 20mΩ on-resistance makes it an ideal cost-effective incremental selection to replace traditional SOP-8 or SOT-23 packaged devices, especially suitable for high-density, high-volume applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN6(2X2) Single-P -20V -0.6V -10A 40(mΩ) 28(mΩ) 20(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN6(2X2) Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN6(2X2) Single-P -20V -0.6V -10A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN6(2X2) Single-P -20V -0.6V -10A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN6(2X2) Single-P MOS

VDS=-20V: Suitable for 3.3V/5V/12V systems, providing sufficient margin for negative voltage switching application voltage spikes, reducing avalanche breakdown risk.
VGS=±20V: Compatible with 1.8V~12V logic levels, can be directly connected to MCU/PMIC, eliminating the need for level shifting circuits.
Vth=-0.6V (Typical): Can enter the fully enhanced region even with low drive voltage, especially suitable for battery voltage decay scenarios.
RDS(on)=20mΩ @ VGS=10V: Ultra-low on-resistance, significantly reduces temperature rise under full load, can reduce the need for large copper areas for heat dissipation.
ID=-10A: Ample continuous current margin to handle peak demands of most portable and automotive auxiliary loads.
Package DFN6(2X2): Small size, low parasitic parameters, supports high-frequency switching, saves PCB area and assembly costs.

Domain and module applications:


Portable Device Power Management: Low internal resistance improves boost/buck efficiency, extends battery life, small package aids ultra-thin design.
Battery Protection Module: Fast response ensures microsecond shutdown during overcurrent/short circuit, low internal resistance reduces protection board self-heating.
Low-Voltage Motor Drive: Low PWM switching losses, smoother motor operation, significantly reduced controller temperature rise.
Consumer Electronics Control Module: Direct logic level drive simplifies peripherals, suitable for high-volume, low-cost products like smart sockets, USB switches.
LED Lighting Driver: Low conduction voltage drop reduces constant current source power loss, supports multi-channel parallel connection, improving overall luminaire efficacy.
DC-DC Converter: Replaces Schottky diodes in synchronous rectification, heavy-load efficiency can be improved by 2~3%, facilitating module miniaturization.
Automotive Auxiliary Power: Voltage margin and wide operating temperature range suitable for 12V automotive bus, high reliability.

Selection Summary: The SSM6J512NU-VB achieves a balance between performance margin, package size, and system cost. It is a cost-effective general-purpose choice for 20V low-voltage negative voltage switching applications, particularly suitable for projects with strict requirements on space and thermal dissipation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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