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SSM6J502NU-VB Product details
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You are designing a high-density power module, board space is tight, yet you need to handle -10A load current and low-voltage, high-current switching. Traditional P-channel MOSFETs often struggle to balance package size and conduction losses. The VBsemi SSM6J502NU-VB provides the ideal answer – it integrates -20V voltage rating, -10A current capability, and an on-resistance as low as 20mΩ into a miniature DFN6(2x2) package, allowing compact low-voltage systems to dissipate heat efficiently and operate stably.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN6(2X2) | Single-P | -20V | -0.6V | -10A | 40(mΩ) | 28(mΩ) | 20(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN6(2X2) | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN6(2X2) | Single-P | -20V | -0.6V | -10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN6(2X2) | Single-P | -20V | -0.6V | -10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN6(2X2) | Single-P | MOS |
Drain-Source Voltage -20V, suitable for low-voltage P-channel circuits
Gate Drive Range ±20V, compatible with various logic level drives
Threshold Voltage -0.6V, reliably turned on by low-voltage signals
On-Resistance 40mΩ (2.5V drive) / 28mΩ (4.5V drive) / 20mΩ (10V drive), losses optimized with drive voltage
Maximum Current -10A, high current in a small package
Technology Trench process, excellent switching performance and conduction characteristics
Domain and module applications：
Battery Protection Board – As a P-channel switch, quickly disconnects the negative terminal path during over-discharge or overcurrent, effectively protecting the battery cell.
Power Bank/Charger – Used as the main switch on the battery side, low on-resistance reduces temperature rise, aiding ultra-thin design.
Load Switch – Enables precise power on/off in portable devices, extremely low static power consumption, extending standby time.
DC-DC Power Module – Utilizes low RDS and fast switching characteristics in synchronous rectification or reverse polarity protection circuits to improve efficiency.
Power Tools/Handheld Devices – Handles -10A peak current, ensuring stable and reliable motor drive and power path operation.
LED Lighting Driver – Enables low-side PWM dimming or constant current control, low switching losses, controllable heat generation.
IoT Sensor Nodes – Compatible with 1.8V~4.5V logic levels, simplifying MCU interface design, reducing overall power consumption.
One-sentence Summary: The SSM6J502NU-VB is a P-channel MOSFET designed specifically for low-voltage, high-density applications, trading a tiny footprint for low impedance and high current – it is the 'efficient switch' and 'space saver' for your power path design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
