Featured Model

Last updated:

SiA433EDJ-VB Product details

Product introduction:

SiA433EDJ-VB is a Single P-MOSFET optimized for low-voltage power switching applications. The Trench process ensures low switching losses and high reliability, while the DFN6(2X2) package balances heat dissipation with board space. With a -20V drain-source voltage rating, -10A continuous drain current, and 20mΩ on-resistance, it serves as an ideal high-density alternative to traditional SOP-8 or SOT23 packages, particularly suited for compact, high-volume applications.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN6(2X2) Single-P -20V -0.6V -10A 40(mΩ) 28(mΩ) 20(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN6(2X2) Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN6(2X2) Single-P -20V -0.6V -10A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN6(2X2) Single-P -20V -0.6V -10A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN6(2X2) Single-P MOS

VDS=-20V: Suitable for 5V/12V systems, providing sufficient margin for negative voltage spikes and reducing avalanche breakdown risk.
VGS=±20V: Compatible with 1.8V to 12V logic levels, enabling direct connection to MCU/PMIC without level-shifting circuits.
Vth=-0.6V: Enables turn-on at low drive voltages, suitable for battery voltage decay and low-voltage rail applications.
RDS(on)=20mΩ @ VGS=10V: Ultra-low on-resistance significantly reduces temperature rise under full load, minimizing required copper area for heat dissipation.
RDS(on)=28mΩ @ VGS=4.5V, 40mΩ @ VGS=2.5V: Supports low-voltage drive for enhanced flexibility.
ID=-10A: Ample continuous current margin to handle peak demands of most portable and automotive auxiliary loads.
Package DFN6(2X2): Small footprint, low parasitic parameters, supports high-frequency switching, and reduces PCB area and assembly costs.

Domain and module applications:


Portable Device Power Management: Low on-resistance improves boost/buck efficiency, extends battery life, and small package enables ultra-thin designs.
Battery Protection Modules: Fast response ensures microsecond-level shutdown during overcurrent/short-circuit conditions, while low on-resistance reduces self-heating in protection boards.
Low-Voltage Motor Drives: Low PWM switching losses result in smoother motor operation and significantly reduced controller temperature rise.
Consumer Electronics Control Modules: Direct logic-level drive simplifies peripheral circuits, ideal for high-volume, low-cost products like smart sockets and USB switches.
LED Lighting Drivers: Low conduction voltage drop reduces constant current source power loss, supports multi-channel parallel operation, and improves overall lighting efficiency.
DC-DC Converters: Replaces Schottky diodes in synchronous rectification, improving heavy-load efficiency by 2-3% and facilitating module miniaturization.
Automotive Auxiliary Power Supplies: Voltage margin and wide operating temperature range suit 12V automotive bus systems, ensuring high reliability.

Selection Summary: The SiA433EDJ-VB achieves a balanced trade-off between performance margin, package size, and system cost, making it a cost-effective universal choice for -20V low-voltage switching applications, particularly for projects with strict space and thermal requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat