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LSIC1MO120G0080-VB Product details
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The VBsemi LSIC1MO120G0080-VB is a Single N-channel field-effect transistor based on SiC (Silicon Carbide) technology, designed for high-voltage, high-efficiency power conversion and demanding industrial applications. Its TO247-4L package provides an excellent thermal path and creepage distance, suitable for high-power-density modules and high-reliability systems. The device offers stable and fast switching characteristics within a 1200V drain-source voltage range, and its on-resistance varies smoothly with temperature, helping to reduce conduction losses under high-temperature conditions and improve overall system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
- Drain-Source Voltage (VDS): 1200V
- Gate-Source Voltage (VGS): -4V (allowable range)
- Threshold Voltage (Vth): 2~4V
- On-Resistance (VGS=18V): 80mΩ (typical)
- Maximum Drain Current (ID): 30A
- Package: TO247-4L
- Technology: SiC
Domain and module applications：
1. Photovoltaic Inverters: Used as the main switch in boost or inverter stages, leveraging SiC's low switching losses and high voltage rating to improve power conversion efficiency and reduce cooling requirements.
2. New Energy Vehicle Charging Stations: Suitable for the PFC and DC-DC stages of high-voltage DC charging modules, supporting high-frequency operation, reducing magnetic component size, and increasing power density.
3. Energy Storage Systems: Serves as the main power switch in bidirectional battery charge/discharge converters, enabling highly reliable energy dispatch and adapting to 800V and above high-voltage buses.
4. Industrial Motor Drives: Used in the rectifier/inverter units of high-voltage variable frequency drives or servo drives, reducing switching stress, improving motor operation smoothness, and extending equipment life.
5. High-Frequency Switching Power Supplies: Suitable for bridge arm switches in topologies like LLC and Phase-Shifted Full-Bridge. Leveraging SiC's low reverse recovery charge, it significantly reduces switching ringing and electromagnetic interference.
6. Uninterruptible Power Supplies (UPS): Used as the power factor correction and inverter stage device in online UPS systems, improving overload capability and overall efficiency, meeting the high power consumption scenarios of data centers.
7. Railway Auxiliary Converters: Used in the high-voltage DC-DC or inverter stages of train auxiliary power supply systems, withstanding harsh electrical environments and ensuring long-term operational stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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