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AIMZHN120R060M1TXKSA1-VB Product details
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Struggling with high switching losses and thermal management challenges in high-voltage systems? Let VBsemi AIMZHN120R060M1TXKSA1-VB help! This TO247-4L-packaged SiC N-MOSFET utilizes advanced silicon carbide technology, offering a high voltage rating of 1200V and an on-resistance of only 80mΩ, maintaining stable and reliable performance even at high temperatures and frequencies. Compared to traditional silicon-based devices, switching losses are significantly reduced, helping engineers easily improve system efficiency. It is a 'performance powerhouse' for high-voltage power supplies and industrial applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
Voltage Rating: 1200V (handles high-voltage systems with ease, ample margin)
Gate Drive Voltage: VGS = -4V (compatible with dedicated negative gate drive schemes for more reliable turn-off)
Threshold Voltage: 2~4V (clear threshold, easy drive design)
Ultra-Low On-Resistance: 80mΩ @ 18V (extremely low conduction losses, significantly reduced heat generation)
High Current Capability: 30A (high power density, high power in a small volume)
Package: TO247-4L (four-pin Kelvin source, reduces drive loop parasitic inductance)
Technology: SiC (wide bandgap material, high temperature tolerance, high frequency, high reliability)
Domain and module applications：
– Six Popular Scenarios, one solution
Photovoltaic Inverters: Efficient DC-AC conversion, increases grid-tied power generation revenue
Energy Storage Systems: Bidirectional power conversion, low conversion losses during charge/discharge
New Energy Vehicles: Onboard chargers, DC-DC converters, contributing to vehicle lightweighting
Industrial Power Supplies: High-frequency switching power supplies, UPS, significant energy savings
Charging Stations: High-power DC fast charging, reliable heat dissipation, stable output
Motor Drives: High-voltage variable frequency drives, fast switching speed, lower noise
AIMZHN120R060M1TXKSA1-VB – High-voltage platform, empowered by silicon carbide, making your power supply design more efficient and reliable!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
