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AIMZH120R080M1TXKSA1-VB Product details
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The AIMZH120R080M1TXKSA1-VB is a Single N-MOS optimized for high-voltage power conversion scenarios, based on third-generation SiC technology, achieving extremely low switching losses and excellent high-temperature reliability. The TO247-4L package optimizes the drive loop parasitic inductance. With a 1200V withstand voltage, 30A current carrying capacity, and 80mΩ on-resistance, it is an ideal choice for high-voltage, high-density applications such as photovoltaic inverters, energy storage converters, and high-power industrial power supplies.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
VDS=1200V: Suitable for 400V/690V and 1000V level bus systems, providing ample margin for voltage spikes and reducing system failure risk.
VGS=-4V: Supports effective negative voltage turn-off, enhancing dv/dt immunity and preventing gate mis-triggering.
Vth=2~4V: Concentrated threshold voltage distribution facilitates drive circuit design while balancing noise immunity and full turn-on.
RDS(on)=80mΩ @ VGS=18V: Inherent low on-resistance characteristic of SiC material, significantly outperforming same-spec Si devices in conduction loss, offering clear heavy-load efficiency advantages.
ID=30A: Ample continuous current capability to meet steady-state and transient load demands of high-power modules.
Package TO247-4L: Kelvin source structure effectively reduces gate-source common source inductance, supports higher switching frequencies, and enhances heat dissipation.
Technology SiC: Wide bandgap material provides extremely low reverse recovery charge and negative temperature coefficient characteristics, improving system reliability and long-term stability.
Domain and module applications：
Photovoltaic Inverters: High bus voltage and low conduction loss improve MPPT efficiency; SiC fast switching characteristics reduce passive component size.
Energy Storage Converters (PCS): Extremely low reverse recovery loss in bidirectional conversion scenarios, supporting high-frequency bidirectional power flow and improving cycle efficiency.
Electric Vehicle DC Fast Chargers: 1200V withstand voltage adapts to the high-voltage bus after three-phase rectification, shortening charging time and reducing overall temperature rise.
High-Power Switching Power Supplies: Using SiC in synchronous rectification and PFC stages significantly improves power density, meeting high efficiency and miniaturization needs.
Industrial Motor Drives: Reduces switching losses in high-voltage inverters, improves output waveforms, and reduces motor insulation stress.
Uninterruptible Power Supplies (UPS): High efficiency and reliability ensure power supply for critical loads while reducing cooling costs.
High-Voltage Battery Formation and Testing Equipment: Precise current control and fast response increase test throughput and reduce energy consumption.
Selection Summary: The AIMZH120R080M1TXKSA1-VB achieves a balance of low on-resistance, high-frequency capability, and robust thermal performance on a 1200V high-voltage platform. It is a high-performance upgrade solution replacing traditional silicon-based IGBTs/MOSFETs, particularly suitable for industrial and new energy applications with stringent requirements for efficiency, power density, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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