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MSC080SMA120B4-VB Product details
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Are you an engineer designing high-efficiency photovoltaic inverters or high-power switching power supplies? Facing a 1200V high-voltage bus, you need to ensure system safety while minimizing switching and conduction losses – traditional silicon-based devices are no longer sufficient. The VBsemi MSC080SMA120B4-VB is a Single N-Channel Power MOSFET based on SiC technology, packaged in TO247-4L. It features a 1200V withstand voltage, 30A continuous current capability, and an on-resistance of only 80mΩ with an 18V gate drive, maximizing the advantages of silicon carbide material – high frequency, high temperature, and high efficiency – making your power converters smaller, cooler, and more reliable.###
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
- **Drain-Source Voltage VDS 1200V**, covering 800V to 1000V system voltages, easily handling surge spikes
- **Gate Drive supports -4V negative turn-off, 18V recommended turn-on voltage**, enabling fast dv/dt turn-off and suppressing crosstalk
- **Threshold Voltage Vth 2~4V**, perfectly matched for SiC drive design, with strong anti-interference capability
- **On-Resistance RDS(ON) 80mΩ (18V drive)**, significantly reduces steady-state losses, enhancing high-current output capability
- **Maximum Drain Current ID 30A**, suitable for high power density applications
- **TO247-4L Package**, with Kelvin source pin, reducing common source inductance and supporting higher frequency switching
- **SiC Technology**, high-temperature resistance, low reverse recovery charge, switching losses significantly better than same-spec silicon-based devices
###
Domain and module applications：
**Photovoltaic Inverters / Energy Storage Converters** – As the main switch for Boost or inverter bridges, the low-loss characteristics of SiC enable system efficiency up to 99%, while reducing heatsink size, helping you achieve more compact string inverter designs.
**Electric Vehicle Charging Stations (DC Fast Charging)** – Stable operation over a wide 380V~1000V input voltage range, combined with 30A/1200V capability, easily handles power module parallel expansion for faster, more stable charging.
**High-Power Switching Power Supplies / LLC Converters** – When switching frequencies exceed 100kHz, SiC's low gate charge and extremely fast switching speed significantly reduce drive and switching losses, dramatically shrinking magnetic component size and multiplying power density.
**UPS Uninterruptible Power Supplies** – High reliability and surge withstand capability are the lifeline of UPS. 1200V withstand voltage plus excellent thermal stability ensures stable, pure power output even in harsh grid environments.
**Motor Drives / Industrial Inverters** – Using the TO247-4L Kelvin source package effectively avoids gate oscillation under high voltage and high current; combined with negative voltage turn-off capability, it greatly improves system operational reliability in strong electromagnetic interference environments.
In a nutshell: The MSC080SMA120B4-VB is not just an ordinary MOS tube; it is the 'efficiency engine' and 'reliability cornerstone' for your high-voltage, high-power designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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