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IMZ120R060M1HXKSA1-VB Product details
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The IMZ120R060M1HXKSA1-VB is a Single N-MOS designed for high-voltage, high-efficiency power conversion scenarios. It uses advanced SiC (Silicon Carbide) technology, combining extremely low switching losses with excellent high-temperature reliability. The TO247-4L package provides good heat dissipation paths and low parasitic inductance, making it very suitable for high-power, high-density applications. The powerful combination of 1200V withstand voltage, 30A current carrying capacity, and 80mΩ on-resistance makes it a preferred alternative to traditional silicon-based devices in demanding environments such as photovoltaic inverters, on-board chargers, and industrial power supplies.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
VDS=1200V: Covers high-voltage bus systems, providing ample voltage margin, reducing the risk of avalanche breakdown and short-circuit failure.
VGS=-4V: Supports negative voltage turn-off, significantly enhancing dv/dt interference immunity in bridge topologies. Combined with the recommended 18V drive voltage (RDS(on) test condition), it achieves stable and reliable switching control.
Vth=2~4V: Reasonable threshold voltage window, balancing noise immunity and drive compatibility, suitable for common gate driver ICs.
RDS(on)=80mΩ @ VGS=18V: Low on-resistance from SiC material significantly reduces full-load losses, improving system efficiency and simplifying thermal design.
ID=30A: Strong continuous current capability, capable of handling steady-state and transient load demands of high-power converters.
Package TO247-4L: Kelvin source pin effectively suppresses gate drive loop parasitic inductance, supporting high-frequency switching while enhancing heat dissipation.
Technology SiC: Wide bandgap characteristics bring lower switching losses, higher operating junction temperature, and faster reverse recovery, significantly outperforming traditional Si devices.
Domain and module applications：
Photovoltaic Inverters: High withstand voltage and low losses help achieve over 99% efficiency; SiC's high-frequency characteristics can reduce the size of magnetic components, lowering system weight and cost.
On-Board Chargers (OBC): Extremely low switching losses in bidirectional charging/discharging topologies; combined with negative voltage turn-off, improves EMI margin and system reliability.
Charging Stations/DC-DC Converters: 30A current carrying capacity matches high-power modules; low thermal stress ensures stable and reliable operation under long-duration full load.
Industrial Power Supplies and UPS: Suitable for both hard-switching and soft-switching topologies; low reverse recovery charge reduces ringing and overshoot, extending equipment lifespan.
Energy Storage and High-Voltage DC-DC: 1200V withstand voltage covers 800V bus systems, enabling high-efficiency, miniaturized energy storage converters.
Motor Drives/Traction Inverters: Fast switching characteristics of SiC reduce torque ripple, enabling more precise motor control and significantly lowering system temperature rise.
Selection Summary: The IMZ120R060M1HXKSA1-VB achieves an excellent balance between the 1200V high-voltage platform, low on-resistance, high-speed switching capability, and the advantages of the TO247-4L package. It is a high cost-performance SiC solution for high-performance power conversion applications, particularly suitable for projects with strict requirements for efficiency, power density, and high-temperature reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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