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C3M0075120K1-VB Product details
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The VBsemi C3M0075120K1-VB is a Single N-channel Silicon Carbide (SiC) power field-effect transistor, part of the VBsemi brand's high-performance SiC product series. This product is manufactured using advanced SiC technology, featuring a high drain-source withstand voltage of 1200V and a continuous drain current capability of 30A, suitable for high-voltage, high-power, high-frequency power conversion applications. Its low on-resistance and excellent switching characteristics effectively reduce system power consumption and improve efficiency. The product uses a TO247-4L package, suitable for industrial applications requiring high heat dissipation and reliable electrical isolation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
- Drain-Source Voltage (VDS): 1200V
- Gate-Source Voltage (VGS): -4V (Maximum Rating)
- Threshold Voltage (Vth): 2~4V
- On-Resistance (VGS=18V): 80mΩ
- Maximum Drain Current (ID): 30A
- Technology: SiC
- Package: TO247-4L
Domain and module applications：
1. Photovoltaic Inverters: The C3M0075120K1-VB is suitable for boost and inverter circuits in high-voltage photovoltaic inverters. Its 1200V withstand voltage and low on-resistance help improve system conversion efficiency and reduce energy loss.
2. Electric Vehicle Charging Stations: In the power conversion module of DC fast chargers, this device can serve as a high-frequency switching transistor, achieving efficient and stable power conversion to meet high-power charging demands.
3. Industrial Power Supplies and UPS: Suitable for PFC and inverter stages in high-end industrial power supplies and Uninterruptible Power Supplies (UPS), leveraging SiC material's high-temperature characteristics and low switching losses to enhance power density and reliability.
4. Motor Drive Systems: Can be used in the power stage of high-voltage motor drives, such as industrial frequency converters and servo drives, for efficient motor control and overcurrent protection.
5. Energy Storage Systems (ESS): In energy storage converters, this device is suitable for bidirectional DC-DC converters and grid-tied inverters, supporting high-voltage buses and ensuring efficient energy management.
6. High-Voltage DC-DC Converters: Suitable for high-voltage conversion scenarios like on-board DC-DC converters in new energy vehicles and telecom power supplies, leveraging its ultra-low on-resistance and fast switching capability for miniaturization and high-efficiency design.
7. High-Frequency Induction Heating and Welding Equipment: This model features excellent switching performance, applicable to high-frequency induction heating power supplies, welders, etc., increasing operating frequency, reducing switching losses, and extending equipment lifespan.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
