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SCT3080KRC15-VB Product details
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Are you designing a high-power-density industrial power system with bus voltages reaching thousands of volts, needing to handle 30A of high current impact? Traditional silicon-based MOSFETs suffer from high switching losses and thermal runaway risks under high voltage. The VBsemi SCT3080KRC15-VB is the perfect tool for your high-voltage, high-power applications. Based on Silicon Carbide (SiC) technology, it integrates 1200V withstand voltage, 30A current carrying capacity, and an ultra-low on-resistance of only 80mΩ in a TO247-4L package, enabling high-voltage power supply designs to achieve both high efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
- Withstand Voltage 1200V, easily covering high-voltage scenarios like three-phase grids and photovoltaic inverters
- Gate drive range compatible with -4V negative voltage turn-off, stronger dv/dt interference immunity
- Threshold Voltage 2~4V, driver-friendly design, clear switching characteristics
- On-Resistance 80mΩ (at 18V drive), fully leveraging SiC material advantages, losses significantly lower than Si devices of the same specification
- Maximum Current 30A, TO247-4L package provides excellent heat dissipation path
Domain and module applications：
Photovoltaic Inverters – Used as the main switch in boost or inverter stages, leveraging SiC's low switching losses to improve overall system efficiency and reduce cooling costs.
Energy Storage Converters (PCS) – Enables high-frequency operation in bidirectional DC-DC and DC-AC topologies, reducing the size of magnetic components and increasing power density.
Electric Vehicle Charging Stations – For 800V high-voltage platforms, the SCT3080KRC15-VB ensures long-duration full-load output with its low on-resistance and high-temperature stability.
Industrial Motor Drives – High dv/dt tolerance combined with the 4-pin package reduces drive loop parasitic inductance, resulting in cleaner switching waveforms and smoother motor operation.
Uninterruptible Power Supplies (UPS) – Replaces traditional IGBTs or super-junction MOSFETs in high-voltage buses, significantly reducing conduction and switching losses, improving system efficiency.
High-Power Switching Power Supplies (SMPS) – Used in LLC resonant or phase-shifted full-bridge topologies for high-frequency, high-efficiency conversion, suitable for server and telecom power supplies.
In a nutshell: The SCT3080KRC15-VB is not just an ordinary MOSFET; it is your 'SiC core engine' and 'loss terminator' on the path to high-voltage, high-efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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