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AIMZHN120R080M1TXKSA1-VB Product details
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Still struggling with high switching losses and heat dissipation issues in high-voltage systems? Let the VBsemi AIMZHN120R080M1TXKSA1-VB solve your problems! This TO247-4L packaged SiC N-MOSFET uses advanced Silicon Carbide technology, with a withstand voltage of up to 1200V, yet can carry 30A of high current, with an ultra-low on-resistance of only 80mΩ (@VGS=18V), excellent high-temperature characteristics, and significantly reduced switching losses. Compared to traditional silicon-based devices, SiC makes high-frequency, high-voltage design easier, making it an 'efficiency tool' for power engineers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
Withstand Voltage: 1200V (Ample safety margin for high-voltage applications)
Gate Drive Voltage: -4 ~ 18V (Recommended 18V drive, compatible with negative voltage turn-off)
Threshold Voltage: 2~4V (Reliable turn-on with standard drive logic)
Ultra-Low On-Resistance: 80mΩ @ VGS=18V (Extremely low conduction losses)
High Current Capability: 30A (Worry-free high-power output)
Technology: SiC (High-temperature resistance, high frequency, high efficiency)
Package: TO247-4L (Suitable for high-power-density design)
Domain and module applications：
– Seven Popular Scenarios, one solution
Photovoltaic Inverters: Efficient MPPT and DC-AC conversion, increasing system power generation
Energy Storage Converters: High-voltage side power switch, more stable bidirectional conversion
Electric Vehicle Charging Stations: Core device for high-power DC-DC and PFC circuits
Industrial Motor Drives: High-frequency speed control, reducing power consumption and temperature rise
Uninterruptible Power Supplies (UPS): High-reliability power conversion, protecting critical loads
High-Voltage Auxiliary Power Supplies: Wide input voltage range, adapting to harsh industrial environments
Induction Heating Equipment: High-frequency switching, improving heating efficiency and response speed
AIMZHN120R080M1TXKSA1-VB – Empowered by Silicon Carbide, making high-voltage power design more efficient!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
