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SCT3080KRC14-VB Product details
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The VBsemi SCT3080KRC14-VB is a Single N-channel Silicon Carbide power field-effect transistor using advanced SiC technology, designed for high-voltage, high-frequency, high-efficiency power conversion applications. The device uses a TO247-4L package, supporting Kelvin source connection, effectively reducing drive loop parasitic inductance, significantly improving switching speed and system reliability. Its 1200V drain-source withstand voltage and 30A continuous drain current capability, combined with an on-resistance of only 80mΩ at VGS=18V, make it an ideal choice for high-power applications such as photovoltaic inverters, energy storage converters, and electric vehicle charging stations. Additionally, the inherent wide bandgap characteristics of SiC material provide excellent high-temperature performance and extremely low switching losses, contributing to system miniaturization and energy efficiency improvement.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
- Drain-Source Voltage (VDS): 1200V
- Gate-Source Voltage (VGS): -4V (Negative voltage turn-off capability) / Recommended drive voltage 18V
- Threshold Voltage (Vth): 2~4V
- On-Resistance (VGS=18V): 80mΩ (Typical)
- Maximum Drain Current (ID): 30A
- Package Type: TO247-4L
- Technology: SiC
Domain and module applications：
1. Photovoltaic Inverters: Used in DC-AC boost and inverter stages, reducing conduction and switching losses, improving grid-tied conversion efficiency.
2. Energy Storage Systems (ESS): Applied in bidirectional DC-DC converters, supporting efficient energy feedback and charge/discharge management on high-voltage buses.
3. Electric Vehicle Charging Stations: As the main power switching device, meeting high-voltage and high-current demands, increasing charging module power density.
4. Industrial Motor Drives: Suitable for high-voltage frequency converters and servo drives, enhancing overload capability and long-term operational reliability.
5. Uninterruptible Power Supplies (UPS): Used in the rectifier/inverter stages of online UPS, enabling high-frequency design and reducing overall system volume.
6. Switching Power Supplies: Suitable for high-voltage LLC or phase-shifted full-bridge topologies, reducing stress on transformers and filter components.
7. Wind Power Converters: Used in machine-side or grid-side converters, balancing high withstand voltage and low losses, improving power quality.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
