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GP2T080A120H-VB Product details
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GP2T080A120H-VB is a Single N-MOS deeply optimized for high-voltage, high-efficiency power conversion scenarios. It adopts SiC (Silicon Carbide) technology, achieving an excellent balance between switching speed and high-temperature reliability. The TO247-4L package offers superior heat dissipation and low parasitic inductance. The combination of 1200V withstand voltage, 30A current carrying capacity, and 80mΩ on-resistance makes it an ideal power switch option for fields such as photovoltaic inverters, energy storage converters, on-board chargers, and industrial power supplies.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
VDS=1200V: Suitable for 400V~800V high-voltage bus systems, providing ample margin for voltage spikes, significantly reducing the risk of avalanche breakdown, and enhancing long-term system reliability.
VGS negative bias -4V: Supports negative voltage drive required for safe turn-off, effectively suppressing false turn-on caused by dv/dt, enhancing anti-interference capability under high-voltage, high-frequency conditions.
Vth=2~4V: Reasonable threshold voltage range, enabling fast and reliable turn-on and turn-off with standard SiC drivers.
RDS(on)=80mΩ @ VGS=18V: Low on-resistance characteristic based on SiC material significantly reduces full-load conduction losses, decreasing heatsink size and system cost.
ID=30A: Ample continuous current capability meets steady-state and surge load requirements of high-power modules, suitable for multi-tube parallel connection to expand power levels.
Package TO247-4L: Four-pin design separates the drive loop from the power loop, reducing switching oscillations and parasitic inductance; through-hole package facilitates efficient heat dissipation, suitable for industrial-grade power board layouts.
Domain and module applications：
Photovoltaic Inverters: High-voltage, high-frequency advantages of SiC material improve MPPT efficiency and inverter conversion efficiency, reducing overall system losses and thermal stress.
Energy Storage Converters (PCS): Low switching losses in bidirectional Buck/Boost topologies support higher switching frequencies, effectively reducing the size of magnetic components.
On-Board Chargers (OBC): 1200V withstand voltage covers 800V electrical architectures, increasing charging power density while meeting automotive-grade reliability requirements.
Industrial Power Supplies and LLC Resonant Converters: Low voltage drop and fast recovery characteristics suit high-frequency resonant soft-switching, achieving overall system efficiency above 98%.
Uninterruptible Power Supplies (UPS): Direct connection to high-voltage bus reduces transformer stages, improving system overload capability and dynamic response speed.
Motor Drives and Frequency Converters: Low switching losses of SiC allow higher carrier frequencies, improving motor noise and current harmonics, resulting in smooth and efficient drive.
High-Voltage DC-DC Converters: Replaces traditional silicon devices in synchronous rectification or active clamp circuits, significantly improving heavy-load efficiency, facilitating module miniaturization.
Selection Summary: The GP2T080A120H-VB, with its SiC technology, 1200V withstand voltage, and low on-resistance, achieves a balance of efficiency, thermal management, and reliability in high-voltage, high-power systems, particularly suitable for industrial and new energy applications with strict requirements for switching frequency and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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