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AIMZH120R060M1TXKSA1-VB Product details
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AIMZH120R060M1TXKSA1-VB is a Single N-MOSFET deeply optimized based on SiC (Silicon Carbide) technology, using a TO247-4L four-pin package, specifically designed for high-voltage, high-frequency power conversion scenarios. SiC material brings extremely low switching losses and excellent high-temperature stability. The TO247-4L effectively reduces drive loop parasitic inductance through the Kelvin source structure, further enhancing high-frequency operational reliability. The combination of 1200V withstand voltage, 30A current carrying capacity, and 80mΩ on-resistance makes it a preferred power switching device for photovoltaics, charging stations, high-voltage DC-DC systems, and more.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
VDS=1200V: Suitable for three-phase grid buses, photovoltaic strings, and high-voltage DC systems, providing ample breakdown voltage margin, significantly reducing the risk of failure due to voltage spikes.
VGS=-4V: Supports negative voltage turn-off, enhancing dv/dt immunity, effectively preventing false turn-on caused by the Miller effect in bridge topologies.
Vth=2~4V: Moderate threshold voltage distribution, balancing noise immunity and compatibility with common drive levels, simplifying gate drive design.
RDS(on)=80mΩ @ VGS=18V: Ultra-low on-resistance, significantly reducing full-load conduction losses, facilitating heat sink miniaturization.
ID=30A: Ample continuous drain current capability, covering most medium-power high-voltage conversion applications.
Package TO247-4L: Four-pin Kelvin source layout, significantly reducing switching loop parasitic inductance, improving switching waveforms and reducing ringing losses.
Technology SiC: Extremely low reverse recovery charge, wide bandgap characteristics support high-frequency switching, while allowing higher junction temperature operation, increasing system power density.
Domain and module applications：
Photovoltaic Inverters: 1200V withstand voltage and low conduction losses directly improve the efficiency of boost and inverter stages, contributing to power density upgrades in string solutions.
Automotive and Charging Station Power Supplies: SiC's high-frequency switching characteristics can reduce the size of transformers and filter inductors, while also lowering the overall thermal management burden.
High-Frequency LLC Resonant Converters: Extremely low switching losses and reverse recovery characteristics make extending the frequency to higher levels feasible, suitable for 3kW~10kW class modules.
UPS Uninterruptible Power Supplies: High withstand voltage margin and high reliability ensure stable operation during mains/bypass switching and overload conditions.
Industrial Motor Drives: Direct connection to high-voltage buses simplifies multi-level topologies, low junction-to-case thermal resistance combined with SiC's thermal advantages improve driver reliability.
High-Voltage DC-DC Converters: Achieves high-efficiency conversion in both bidirectional and unidirectional scenarios, especially suitable for charge/discharge stages in battery energy storage systems.
Selection Summary: AIMZH120R060M1TXKSA1-VB achieves a precise balance between high-voltage stress tolerance, high-frequency switching capability, and thermal management friendliness. It is a high-performance general-purpose choice for 1200V class power conversion applications, particularly suitable for system designs with stringent requirements for efficiency and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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