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C3M0065100K-VB Product details
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** VBsemi C3M0065100K-VB is a Single N-channel power field-effect transistor based on Silicon Carbide (SiC) technology, designed for high-voltage, high-efficiency, and high-switching-frequency power conversion scenarios. The device uses a TO247-4L through-hole package, offering excellent heat dissipation and low parasitic inductance, suitable for high-power modules and industrial-grade applications. Its 1200V drain-source withstand voltage and 30A continuous drain current capability, combined with an 80mΩ (@VGS=18V) on-resistance, can significantly reduce conduction losses; simultaneously, the SiC material brings excellent high-temperature resistance and low switching loss characteristics, helping to achieve system miniaturization and high efficiency.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
- Drain-Source Voltage (VDS): 1200V
- Gate-Source Voltage (VGS): -4V ~ 18V
- Threshold Voltage (Vth): 2V ~ 4V
- On-Resistance (VGS=18V): 80mΩ (typical)
- Maximum Drain Current (ID): 30A
- Package: TO247-4L
- Technology: SiC (Silicon Carbide)
**
Domain and module applications：
1. **Photovoltaic Inverters**: Used for high-voltage DC-AC conversion, SiC's low conduction losses and high switching speed improve system efficiency and reduce cooling requirements.
2. **Energy Storage Systems (ESS)**: Serves as a key switching device between the battery side and the grid side, enabling bidirectional charge/discharge control, suitable for high-voltage and high-current scenarios.
3. **Electric Vehicle On-Board Chargers (OBC)**: Efficiently performs AC-DC and DC-DC conversion at 1200V bus voltage, improving charging power density.
4. **Electric Vehicle Main Traction Inverters**: Meets high-voltage, high-current drive requirements, SiC characteristics improve vehicle range and power performance.
5. **Industrial Motor Drives**: Used in high-voltage inverters, servo drives, and pump control, supports high-frequency PWM, reducing harmonic losses.
6. **High-Voltage DC-DC Converters**: Suitable for data centers, telecom power supplies, and high-voltage bus power systems, achieving efficient voltage conversion.
7. **Uninterruptible Power Supplies (UPS)**: Performs rectification/inversion functions in high-voltage online UPS, improving system reliability and overload capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
