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AIMZH120R060M1T-VB Product details
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VBsemi AIMZH120R060M1T-VB is a Single N-channel power field-effect transistor using Silicon Carbide (SiC) technology, designed for high-voltage, high-frequency, and high-power-density applications. Its TO247-4L package integrates a Kelvin source pin, effectively reducing drive loop parasitic inductance and improving switching transient performance. The device provides stable and reliable high-voltage blocking capability within a 1200V drain-source voltage range, and features a 30A continuous drain current and low on-resistance of 80mΩ (typical at VGS=18V), significantly reducing conduction and switching losses, thereby improving overall system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
Drain-Source Voltage (VDS): 1200V
Gate-Source Voltage (VGS): -4V~+18V (Recommended drive voltage 18V)
Threshold Voltage (Vth): 2~4V
On-Resistance (VGS=18V): 80mΩ (typical)
Maximum Drain Current (ID): 30A
Package: TO247-4L
Technology: SiC (Silicon Carbide)
Domain and module applications：
1. Photovoltaic Inverters: Used in the main power stage of DC-AC conversion, leveraging SiC's low switching losses and low reverse recovery characteristics to improve grid-tied conversion efficiency.
2. Electric Vehicle Charging Stations: Suitable for high-frequency LLC or full-bridge topologies, reducing transformer and filter size, increasing charging module power density.
3. Energy Storage Converters (PCS): In bidirectional DC-DC and DC-AC circuits, enables efficient high-voltage bus conversion, enhancing system thermal stability.
4. High-Voltage DC-DC Converters: Targets data centers, industrial power supplies, etc., used as primary side main switches, effectively reducing rectification losses.
5. Motor Drives and Industrial Inverters: Used for high-voltage motor drives, SiC MOSFET's high-temperature operating capability simplifies thermal design and improves reliability.
6. Uninterruptible Power Supplies (UPS): Leverages high efficiency and low loss advantages in rectification and inversion stages, reducing operating energy consumption.
7. Smart Grids and Solid-State Transformers: Applied in medium-voltage power electronic transformers, leveraging high-frequency and high-voltage characteristics to achieve system miniaturization and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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