AIMZHN120R060M1T-VB Product details
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
VDS=1200V: Suitable for three-phase grid voltage and 800V high-voltage bus systems, providing ample margin for avalanche and voltage spikes, significantly enhancing system surge immunity.
VGS=-4V (Allows negative gate drive): Supports negative voltage turn-off, effectively suppressing Miller effect crosstalk during high-frequency switching, enhancing bridge circuit immunity to false turn-on.
Vth=2~4V: Reasonable threshold voltage distribution, enabling fast and reliable turn-on and turn-off with the drive circuit, compatible with common SiC driver solutions.
RDS(on)=80mΩ @ VGS=18V: Low on-resistance significantly reduces conduction losses, resulting in lower full-load temperature rise, simplifying thermal design and increasing power density.
ID=30A: Strong continuous current capability, capable of stably carrying high-power loads, suitable for main switches or freewheeling paths in medium-to-high power converters.
Package TO247-4L: Four-pin Kelvin structure separates the drive loop from the power loop, reducing gate loop parasitic inductance, supporting higher switching frequencies; also offers strong heat dissipation, suitable for industrial-grade long-term operation.
Technology SiC: Wide bandgap material provides extremely low reverse recovery charge and high-temperature stability, significantly reducing switching losses compared to Si-based devices, improving both system efficiency and reliability.
Domain and module applications:
Photovoltaic Inverters: SiC's low switching losses and high-temperature characteristics improve MPPT and grid-tied efficiency, reduce magnetic component size, and lower system weight.
Energy Storage Converters (PCS): Significantly reduces high-side losses in bidirectional DC-AC conversion, contributing to higher charge-discharge cycle efficiency.
Electric Vehicle Charging Stations: 1200V withstand voltage and low on-resistance match high-voltage fast-charging architectures, reducing heat dissipation pressure on charging modules and enhancing stable output capability.
Industrial Power Supplies and Auxiliary Power Supplies: Kelvin source package optimizes drive waveforms, suitable for high-frequency LLC/phase-shifted full-bridge topologies, improving power conversion density.
High-Voltage DC-DC Converters: Maintains excellent performance under both hard and soft switching, can replace traditional IGBTs and reduce the number of parallel devices, simplifying current sharing design.
Motor Drives and UPS: Wide safe operating area and high surge capability ensure reliable operation during motor start/stop and load transients, providing higher redundancy.
Selection Summary: AIMZHN120R060M1T-VB achieves an industry-leading balance between ultra-high voltage withstand, low conduction loss, fast switching capability, and package integration. It is a high-performance preferred solution for 1200V high-voltage power conversion applications, especially suitable for industrial and new energy projects pursuing high efficiency, high reliability, and high power density.
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