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AIMZHN120R060M1T-VB Product details

Product introduction:

AIMZHN120R060M1T-VB is a Single N-MOSFET optimized for high-voltage, high-power switching applications, utilizing advanced SiC (Silicon Carbide) technology. It offers extremely low switching losses and excellent reliability in high-temperature, high-frequency, and high-voltage applications. The TO247-4L package provides superior heat dissipation and low parasitic inductance. Combined with a 1200V withstand voltage, 30A current carrying capacity, and 80mΩ on-resistance, it is an ideal power switch for photovoltaic inverters, energy storage converters, electric vehicle charging stations, and industrial power supplies, particularly suitable for system-level applications with stringent efficiency and thermal management requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247-4L Single-N 1200V 2~4 30A SiC
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247-4L Single-N SiC
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247-4L Single-N 1200V 2~4 30A 80(mΩ) SiC
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247-4L Single-N 1200V 2~4 30A SiC
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247-4L Single-N SIC

VDS=1200V: Suitable for three-phase grid voltage and 800V high-voltage bus systems, providing ample margin for avalanche and voltage spikes, significantly enhancing system surge immunity.
VGS=-4V (Allows negative gate drive): Supports negative voltage turn-off, effectively suppressing Miller effect crosstalk during high-frequency switching, enhancing bridge circuit immunity to false turn-on.
Vth=2~4V: Reasonable threshold voltage distribution, enabling fast and reliable turn-on and turn-off with the drive circuit, compatible with common SiC driver solutions.
RDS(on)=80mΩ @ VGS=18V: Low on-resistance significantly reduces conduction losses, resulting in lower full-load temperature rise, simplifying thermal design and increasing power density.
ID=30A: Strong continuous current capability, capable of stably carrying high-power loads, suitable for main switches or freewheeling paths in medium-to-high power converters.
Package TO247-4L: Four-pin Kelvin structure separates the drive loop from the power loop, reducing gate loop parasitic inductance, supporting higher switching frequencies; also offers strong heat dissipation, suitable for industrial-grade long-term operation.
Technology SiC: Wide bandgap material provides extremely low reverse recovery charge and high-temperature stability, significantly reducing switching losses compared to Si-based devices, improving both system efficiency and reliability.

Domain and module applications:


Photovoltaic Inverters: SiC's low switching losses and high-temperature characteristics improve MPPT and grid-tied efficiency, reduce magnetic component size, and lower system weight.
Energy Storage Converters (PCS): Significantly reduces high-side losses in bidirectional DC-AC conversion, contributing to higher charge-discharge cycle efficiency.
Electric Vehicle Charging Stations: 1200V withstand voltage and low on-resistance match high-voltage fast-charging architectures, reducing heat dissipation pressure on charging modules and enhancing stable output capability.
Industrial Power Supplies and Auxiliary Power Supplies: Kelvin source package optimizes drive waveforms, suitable for high-frequency LLC/phase-shifted full-bridge topologies, improving power conversion density.
High-Voltage DC-DC Converters: Maintains excellent performance under both hard and soft switching, can replace traditional IGBTs and reduce the number of parallel devices, simplifying current sharing design.
Motor Drives and UPS: Wide safe operating area and high surge capability ensure reliable operation during motor start/stop and load transients, providing higher redundancy.

Selection Summary: AIMZHN120R060M1T-VB achieves an industry-leading balance between ultra-high voltage withstand, low conduction loss, fast switching capability, and package integration. It is a high-performance preferred solution for 1200V high-voltage power conversion applications, especially suitable for industrial and new energy projects pursuing high efficiency, high reliability, and high power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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