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IMZ120R060M1H-VB Product details
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VBsemi IMZ120R060M1H-VB is a Single N-channel field-effect transistor using SiC technology, designed for high-voltage, high-power power conversion and harsh industrial environments. Its TO247-4L package offers excellent heat dissipation performance and high-voltage creepage safety spacing, suitable for high-density power modules, automotive power supplies, and industrial drive applications. The device provides stable and fast switching characteristics within a 1200V drain-source voltage range, supports -4V~+18V gate drive, facilitating low turn-off losses and reliable turn-on; combined with low on-resistance and the high-temperature resistance advantages of SiC wide bandgap material, it can significantly improve system efficiency and power density.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
Drain-Source Voltage (VDS): 1200V
Gate-Source Voltage (VGS): -4V~+18V
Threshold Voltage (Vth): 2~4V
On-Resistance (VGS=18V): 80mΩ (typical)
Maximum Drain Current (ID): 30A
Package: TO247-4L
Technology: SiC
Domain and module applications：
1. On-Board Charging Systems: Used in electric vehicle OBCs and high-voltage DC-DC converters, leveraging SiC's low loss characteristics to improve charging efficiency and power density.
2. Photovoltaic Inverters: Acts as the main switch in Boost circuits and inverter bridges, achieving efficient MPPT and grid connection, reducing conduction and switching losses.
3. Energy Storage Converters: Used for high-voltage battery charge/discharge management, supporting bidirectional energy flow, improving the reliability and conversion efficiency of the energy storage system.
4. DC Fast Charging Stations: Suitable for PFC and LLC resonant converters, meeting the high withstand voltage and high-frequency requirements of high-power fast charging modules.
5. Industrial Motor Drives: Used in high-voltage inverters, servo drives, and high-power UPS, enhancing overload capability and long-term operational stability.
6. High-Voltage Switching Power Supplies: Acts as a high-side main switch in server power supplies, medical power supplies, etc., optimizing efficiency and reducing magnetic component size.
7. Power Grid and Smart Distribution: Applied in solid-state transformers, reactive power compensation, and other high-voltage power conversions, leveraging SiC's fast switching and high-temperature operation advantages to improve power quality.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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