中文
English
SCTWA40N12G24AG-VB Product details
Back to previous pageProduct introduction：
Still troubled by high switching losses and difficult heat dissipation in high-voltage, high-power applications? Let VBsemi SCTWA40N12G24AG-VB solve your problems! This TO247-4L packaged Silicon Carbide N-MOS transistor, using advanced SiC technology, withstands up to 1200V, has an on-resistance of only 80mΩ, can carry 30A of continuous current, and has significantly lower switching losses than traditional silicon devices. Its high-speed switching characteristics and stable high-temperature performance make it the "efficiency champion" in high-voltage scenarios like photovoltaic inverters, on-board charging stations, and industrial power supplies.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
Voltage Rating: 1200V (High-voltage system, ample safety margin)
Drive Conditions: VGS=18V recommended drive, gate withstands negative voltage -4V (effectively suppresses crosstalk false turn-on)
Turn-on Threshold: Vth=2~4V (Moderate threshold, strong anti-interference capability)
Ultra-Low On-Resistance: 80mΩ @ 18V (Extremely low conduction losses, significantly reduced heat generation)
High Current Capability: 30A (Single device can handle high power transmission)
Package: TO247-4L (Four-pin package, Kelvin source design, cleaner drive loop)
Technology: SiC (Silicon Carbide, the first choice for high-frequency, high-voltage, high-temperature applications)
Domain and module applications：
— Five Popular High-Voltage Scenarios, One Chip Solves All
Photovoltaic Inverters: MPPT boost and inverter bridge, efficiency improvement, higher power density
On-Board Charger (OBC): High-voltage DC-DC and PFC, efficient and reliable bidirectional charging/discharging
Industrial Motor Drives: High-frequency PWM control, low losses, low temperature rise, more stable operation
UPS Uninterruptible Power Supplies: Fast switching in high-voltage bus, strong overload capability, protecting critical loads
Energy Storage Systems: BMS high-voltage switch and charge/discharge circuit, low internal resistance brings longer range
SCTWA40N12G24AG-VB — SiC empowered, easily handles high voltage and high current, making your power supply design more efficient and reliable!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
