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AIMZH120R080M1T-VB Product details
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Still troubled by high heat generation and high switching losses in high-voltage, high-power systems? Let VBsemi AIMZH120R080M1T-VB solve your problems! This TO247-4L packaged Silicon Carbide N-MOS transistor, using SiC technology, withstands up to 1200V, has an on-resistance of only 80mΩ, and can carry 30A of current. The Kelvin source package effectively reduces parasitic inductance in the drive loop. Combined with the extremely fast switching speed and low-loss characteristics of SiC material, it makes high-voltage power supply design more efficient and reliable, making it an engineer's "high-voltage weapon."
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
Voltage Rating: 1200V (Handles high-voltage systems with ease)
Drive Voltage: VGS=18V (Recommended drive, supports -4V negative voltage turn-off)
Turn-on Threshold: 2~4V (Reasonable threshold window, strong anti-interference)
Ultra-Low On-Resistance: 80mΩ @ 18V (Milliohm-level losses, significantly reduced heat generation)
High Current Capability: 30A (High power density, ample margin)
Package: TO247-4L (Kelvin source, low drive losses, faster switching)
Technology: SiC (Silicon Carbide, high temperature resistance, high frequency, high efficiency)
Domain and module applications：
— Six High-Voltage Scenarios, One Chip Solves All
Photovoltaic Inverters: Improved MPPT and DC-AC conversion efficiency, more compact system
Charging Stations: High power density in high-voltage fast charging modules, less heat dissipation pressure
UPS Uninterruptible Power Supplies: Efficient rectification and inversion, ensuring stable operation of critical loads
Motor Drives: Industrial variable frequency drives, servo drives, smooth switching, low noise
On-Board OBC and DC-DC: Lightweight and high efficiency, supporting the electrical architecture upgrade of new energy vehicles
High-Voltage Energy Storage: Bidirectional converter PCS, lower energy conversion losses
AIMZH120R080M1T-VB — SiC empowered, making high-voltage, high-power design easier from now on!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
