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NVH4L080N120SC1-VB Product details
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The VBsemi NVH4L080N120SC1-VB is a Single N-channel Silicon Carbide (SiC) Field Effect Transistor, part of the VBsemi brand's high-voltage power device series. Manufactured using advanced silicon carbide technology, this product features extremely low on-resistance, high switching speed, and excellent high-temperature resistance, suitable for high-efficiency, high-power-density power conversion systems. The device uses a TO247-4L package, supports a 1200V drain-source voltage, and adopts a recommended gate drive scheme of +18V / -4V, capable of meeting stringent industrial and automotive-grade application requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | 1200V | 2~4 | 30A | SiC |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247-4L | Single-N | SIC |
- Drain-Source Voltage (VDS): 1200V
- Gate-Source Voltage (VGS): +18V / -4V (Recommended Drive Voltage)
- Threshold Voltage (Vth): 2~4V
- On-Resistance (VGS=18V): 80 mΩ
- Maximum Drain Current (ID): 30A
- Technology Type: SiC Silicon Carbide
- Package: TO247-4L
Domain and module applications：
1. Electric Vehicle Main Drive Inverter: The NVH4L080N120SC1-VB is suitable for electric vehicle main drive motor controllers. Its 1200V high withstand voltage and low on-resistance can significantly improve inverter efficiency, reduce power loss, and extend driving range.
2. Photovoltaic Inverter: In photovoltaic power generation systems, this device can be used in DC-AC inverter circuits and high-frequency DC-DC boost modules, effectively handling high-voltage, high-current operating conditions, improving system conversion efficiency and reliability.
3. Charging Station Power Module: This product is suitable for power conversion circuits in electric vehicle DC fast charging stations. Leveraging the high-frequency, high-voltage characteristics of SiC material, it enables miniaturized design and reduces cooling requirements.
4. Industrial Power Supply and UPS: In switching power supplies, Uninterruptible Power Supplies (UPS), and high-voltage auxiliary power supplies, the NVH4L080N120SC1-VB can serve as a rectifier or inverter stage switching device, ensuring stable operation of equipment under high power density.
5. High-Voltage Motor Drive: Suitable for industrial motor drives and servo drives. Utilizing its low on-resistance and high switching speed, it can improve motor control performance and reduce temperature rise.
6. Energy Storage System (ESS) Power Conversion: In energy storage converters, this device can be used in bidirectional DC-DC converters and grid-tied inverters, meeting the high-voltage side's efficient energy conversion needs.
7. Wind Power Converter: In the grid-side and rotor-side power modules of wind power converters, this SiC MOSFET can enhance the system's withstand voltage level and switching frequency, helping to reduce system size and cost.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
