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AIMW120R080M1-VB Product details
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**The AIMW120R080M1-VB is a Single N-MOS based on SiC-S technology, specifically optimized for high-voltage power switching applications. The TO247 package, combined with the wide bandgap material properties, offers significant advantages over traditional silicon-based devices in high-voltage, high-temperature, and high-frequency operating conditions. The combination of 1200V withstand voltage, 30A current carrying capacity, and 80mΩ on-resistance makes it an ideal core component for high-voltage, high-power applications such as photovoltaic inverters, charging stations, and industrial motor drives, especially suitable for power electronic systems with stringent efficiency and reliability requirements.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
(Key points for selection decision)
- **VDS=1200V**: Covers three-phase industrial grid and high-voltage bus applications, retaining ample avalanche capability to reduce the risk of system failure due to voltage spikes.
- **VGS=-10V**: Features a wide reverse gate withstand voltage margin. Combined with the recommended drive voltage VGS=18V (corresponding to RDS(on) test conditions), it ensures stable device turn-off under harsh switching transients, improving drive reliability.
- **Vth=2~4V**: Small threshold voltage dispersion facilitates parallel current sharing, simplifies drive circuit design, and is compatible with common gate driver ICs.
- **RDS(on)=80mΩ @ VGS=18V**: Extremely low on-resistance significantly reduces conduction losses, especially under heavy load conditions, substantially improving system efficiency and reducing heatsink costs.
- **ID=30A**: Continuous current capability meets the power requirements of most high-voltage power conversion modules, with strong surge current capability suitable for impact loads like motor starting and capacitor charging.
- **Package TO247**: Large package compatible with mainstream cooling solutions, excellent creepage distance and thermal resistance performance, supports long-term high-power operation, suitable for industrial-grade reliability requirements.
- **Technology SiC-S**: Wide bandgap, high critical field strength, low switching losses, switching frequency up to several hundred kHz, enabling miniaturization of magnetic components and effectively reducing system size and weight.
**
Domain and module applications：
- **Photovoltaic Inverters**: SiC's low switching losses improve MPPT tracking efficiency; high-frequency operation reduces transformer and filter inductor size, boosting power density of string inverters.
- **Electric Vehicle Charging Modules**: 1200V withstand voltage directly adapts to 800V high-voltage platforms, achieving lower energy losses in bidirectional OBCs and DC/DC converters, shortening charging time.
- **Industrial Motor Drives**: High junction temperature capability combined with low on-resistance maintains stable output under heavy/overload conditions, reducing inverter heat dissipation pressure and improving motor control accuracy.
- **High-Voltage Energy Storage Systems (ESS)**: Serves as the main switch in bidirectional buck-boost topologies, significantly improving charge/discharge efficiency, extending cycle life, and reducing system lifecycle costs.
- **Uninterruptible Power Supplies (UPS)**: High-frequency, low-loss characteristics reduce output harmonics and filtering costs, while a wide safety margin ensures continuous power supply reliability for critical loads.
- **High-Voltage DC/AC Power Supplies**: In PFC (Power Factor Correction) and full-bridge LLC circuits, replacing silicon-based IGBTs can significantly reduce turn-off tail current, improving full-load efficiency by 2~3%.
- **Rail Transit Auxiliary Converters**: High withstand voltage and low thermal resistance adapt to vibration and wide temperature environments, providing a highly reliable power switching solution for onboard power supplies.
**Selection Summary**: The AIMW120R080M1-VB achieves an advanced balance between high-voltage withstand capability, conduction losses, switching speed, and package reliability. It is a cost-effective alternative to traditional Si-based IGBTs/MOSFETs in 1200V-class power electronic systems, particularly suitable for power conversion projects with strict requirements for efficiency, temperature tolerance, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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