中文
English
IMW120R090M1H-VB Product details
Back to previous pageProduct introduction：
The VBsemi IMW120R090M1H-VB is a Single N-channel silicon carbide (SiC) field-effect transistor, part of the VBsemi brand product series. This product features ultra-high voltage tolerance, low on-resistance, and excellent thermal stability, suitable for efficient, high-power-density power conversion systems. Manufactured using advanced SiC-S technology, it has a drain-source voltage (VDS) of 1200V and operates at a gate-source voltage (VGS) of -10V. The product is packaged in TO247, suitable for industrial-grade application environments requiring excellent heat dissipation and high reliability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
Drain-Source Voltage (VDS): 1200V
Gate-Source Voltage (VGS): -10V
Threshold Voltage (Vth): 2~4V
On-Resistance (VGS=18V): 80 mΩ
Maximum Drain Current (ID): 30A
Domain and module applications：
1. Solar Inverters: The IMW120R090M1H-VB is suitable for power switch modules in high-voltage solar inverters, efficiently converting DC power from solar panels, reducing losses, and improving overall system efficiency.
2. Electric Vehicle Charging Stations: In EV DC fast charging stations, this device can serve as the core switching element for high-voltage rectification and DC-DC conversion, supporting high-power charging and ensuring a stable and reliable charging process.
3. Switching Power Supplies: This model can be used in high-voltage input, high-power output switching power supply circuits, such as server power supplies and industrial power supplies, leveraging the low switching losses of SiC material to achieve higher operating frequencies and power densities.
4. Industrial Motor Drives: Suitable for power stage circuits in industrial variable frequency drives and servo drives, capable of withstanding high-voltage buses and switching rapidly, enabling efficient motor speed regulation and energy-saving control.
5. Uninterruptible Power Supplies (UPS): In UPS systems, this device can be used in the rectifier and inverter stages, ensuring fast switching during mains power interruptions and continuous supply of high-quality AC power to critical loads.
6. High-Voltage DC-DC Converters: In high-voltage DC-DC converters for EV on-board chargers, energy storage systems, etc., this MOSFET can significantly improve conversion efficiency, reduce magnetic component size, and lower system cost.
7. Grid Power Quality Equipment: Can be used in grid conditioning devices like Static Var Generators (SVG) and Active Power Filters (APF), utilizing its high voltage, low resistance, and high-speed switching characteristics to improve compensation accuracy and response speed.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
