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GA10JT12-247-VB Product details
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The GA10JT12-247-VB is a high-performance silicon carbide N-channel power MOS transistor, packaged in TO247, designed for high-voltage, high-power application scenarios. The device is based on advanced SiC-S technology, featuring a 1200V withstand voltage and 30A current capability, with a low on-resistance of 80mΩ, low switching losses, and excellent high-temperature characteristics. Combined with an optimized gate drive design, it can significantly improve system efficiency and reliability, making it an ideal choice for industrial-grade high-power conversion solutions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
Voltage Rating: 1200V
Drive Voltage: -10V (Gate-Source Voltage)
Threshold Voltage: 2~4V
On-Resistance (18V Drive): 80mΩ
Maximum Current: 30A
Technology: SiC-S
Package: TO247
Domain and module applications：
Solar Inverters, Energy Storage Converters → High boost/inverter efficiency, low temperature rise
Electric Vehicle On-Board Chargers (OBC) & DC-DC Converters → Stable high-frequency switching, high power density
Uninterruptible Power Supplies (UPS) → Fast response, strong overload capability
Industrial Motor Drives & Variable Frequency Drives → Reliable high-voltage, high-current drive, impact resistance
High-Voltage Charging Stations, Smart Grid Equipment → Low loss, high reliability, more secure for long-term operation
High-Frequency Switching Power Supplies, Power Factor Correction (PFC) Circuits → Significant advantages in synchronous rectification, more energy-efficient system
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
