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CMF20120D-VB Product details
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The VBsemi CMF20120D-VB is a Single N-channel silicon carbide (SiC) power field-effect transistor, part of the VBsemi brand's high-performance SIC product series. This product is manufactured using advanced SiC-S technology, featuring ultra-high drain-source voltage capability and extremely low conduction losses, suitable for high-voltage, high-power, high-efficiency power conversion and control applications. The model uses a TO247 package, offering excellent heat dissipation performance and reliable electrical isolation, suitable for demanding industrial and automotive-grade application environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
Drain-Source Voltage (VDS): 1200V
Gate-Source Voltage (VGS): -10V (typical operating range, refer to datasheet for details)
Threshold Voltage (Vth): 2~4V
On-Resistance (VGS=18V): 80mΩ
Maximum Drain Current (ID): 30A
Package Type: TO247
Technology Type: SiC-S (Silicon Carbide Trench Process)
Domain and module applications：
1. Solar Inverters and Energy Storage Systems: The CMF20120D-VB is suitable for the boost and inverter stages of solar inverters, as well as Power Conversion Systems (PCS), significantly improving system conversion efficiency and reducing switching losses and thermal stress.
2. Electric Vehicle Charging Stations: In DC fast charging stations and On-Board Chargers (OBC), this device can serve as the main switching power transistor, meeting the high-voltage, high-current switching requirements, enhancing the reliability and power density of the charging system.
3. Industrial Motor Drives: Used in the inverter circuits of high-voltage industrial motor drives, it can efficiently control motor start/stop, speed regulation, and regenerative braking, adapting to harsh industrial electromagnetic environments.
4. Switch Mode Power Supplies (SMPS) and Server Power Supplies: In high-voltage, high-power SMPS, this model enables higher switching frequencies and lower losses, suitable for data center server power modules and communication power systems.
5. UPS Uninterruptible Power Supplies: In online UPS systems, this device is used in the rectifier and inverter stages, providing stable power backup and meeting the high-reliability and high-efficiency requirements of critical loads.
6. High-Voltage DC-DC Converters: Suitable for electric vehicle DC-DC converters and high-voltage industrial DC-DC systems, enabling efficient level conversion and power management.
7. Rail Transit and Electric Traction: In rail transit auxiliary converters and traction converters, this SiC MOSFET can handle high-voltage, high-impact operating conditions, improving overall system performance and long-term stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
