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SCT2080KEC-VB Product details
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You are designing a high-voltage, high-power system, such as a solar inverter or a new energy vehicle charging module, that needs to withstand 1200V bus voltage and 30A high current surges, while also minimizing losses. Ordinary silicon-based MOS transistors either lack sufficient voltage tolerance or have high on-resistance. The VBsemi SCT2080KEC-VB is designed for this purpose – it uses advanced SiC silicon carbide technology to integrate a 1200V withstand voltage, 30A current capability, and a typical on-resistance of 80mΩ in a TO247 package, setting a new benchmark for high-voltage, high-power-density applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- Voltage Rating 1200V, easily handles high-voltage bus scenarios with ample margin
- Gate drive range -10V, combined with SiC gate characteristics, offers more flexible drive design
- Threshold voltage 2~4V, supports reliable turn-on with standard drive voltages
- On-resistance 80mΩ (at 18V drive), maintains extremely low conduction losses even at high voltage
- Maximum current 30A, a single device can handle high-power transmission
- Utilizes SiC-S technology, lower switching losses, excellent high-temperature characteristics
Domain and module applications：
- Solar Inverters – As a Boost or inverter bridge arm switch, significantly improves system efficiency, reduces heatsink size.
- New Energy Vehicle On-Board Chargers (OBC) – Acts as the main switch in high-voltage DC-DC converters, achieving higher power density.
- Energy Storage Converters (PCS) – Leveraging SiC's low switching losses and high voltage tolerance to improve charge/discharge conversion efficiency.
- Industrial Motor Drives – Tolerates bus voltage spikes, reduces switching stress, improves reliability.
- High-Voltage DC-DC Modules – Replaces traditional silicon-based MOS/IGBT, leveraging advantages in synchronous rectification or active clamp topologies.
- Uninterruptible Power Supplies (UPS) – Adapts to wide input voltage ranges, improves overall overload capability and energy efficiency.
- Smart Grid / Solid-State Transformers – In high-frequency, high-voltage switching scenarios, fully utilizes SiC material advantages, simplifying magnetic component design.
One-sentence summary: The SCT2080KEC-VB is not just an ordinary MOS transistor; it is the "silicon carbide engine" and "efficiency tool" for your high-voltage, high-power design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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