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SICW080N120Y-BP-VB Product details
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You are designing a high-power-density industrial power supply or an electric vehicle on-board charger, with a bus voltage as high as 800V~1000V, but facing strict constraints on heat dissipation space and efficiency requirements. Ordinary silicon-based MOS transistors or IGBTs are no longer sufficient, while SiC devices are often prohibitive due to complex drive requirements and high costs. The VBsemi SICW080N120Y-BP-VB is designed for this purpose – based on third-generation SiC-S technology, it integrates a 1200V withstand voltage, 30A current capability, and an on-resistance of only 80mΩ in a TO247 package, making high-voltage, high-power conversion more efficient, reliable, and manageable.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- Voltage Rating 1200V, easily covers 600V~1000V bus systems with ample safety margin
- Gate drive voltage -10V, combined with recommended positive drive voltage, lower switching losses
- Threshold voltage 2~4V, strong anti-interference capability, more flexible drive design
- On-resistance 80mΩ (at 18V drive), maintains extremely low conduction losses even at high voltage
- Maximum continuous drain current 30A, TO247 package offers excellent heat dissipation, suitable for high-power scenarios
- Utilizes SiC-S technology, extremely low reverse recovery charge, high-frequency switching is no longer difficult
Domain and module applications：
- Solar Inverters / Energy Storage Converters – As DC-AC bridge arm switch, significantly improves system efficiency, reduces heatsink size.
- New Energy Vehicle On-Board Chargers (OBC) & DC-DC Converters – Leveraging SiC's high-frequency, high-temperature characteristics to achieve higher power density and smaller magnetic component size.
- Industrial Motor Drives / Servo Drives – Withstands 1200V bus voltage surges while reducing steady-state losses with low on-resistance.
- High-Frequency Switching Power Supplies / LLC Resonant Power Supplies – Extremely low switching losses and reverse recovery charge enable operating frequencies above 200kHz.
- Uninterruptible Power Supplies (UPS) – Improves conversion efficiency of rectifier and inverter stages in online double-conversion topology, reducing overall system temperature rise.
- Charging Station Power Modules – Facing stringent wide voltage output requirements, achieves efficient synchronous rectification with robust SiC body diode.
- High-Voltage Battery Protection and Solid-State Switches – Fast short-circuit turn-off capability provides reliable protection for high-voltage systems.
One-sentence summary: The SICW080N120Y-BP-VB is not just an ordinary SiC MOS transistor; it is the "efficiency engine" and "power density champion" for your 1200V high-voltage power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
