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SCT2160KEC-VB Product details
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The SCT2160KEC-VB is a SiC power MOSFET deeply optimized for high-voltage, high-power switching applications, utilizing SiC-S technology to achieve extremely low switching losses and high-temperature reliability. The TO247 package strikes a good balance between creepage distance, thermal resistance, and mounting strength, making it suitable for demanding high-voltage, high-current applications in industrial and new energy systems. With a 1200V withstand voltage, 30A current-carrying capacity, and 80mΩ on-resistance (@VGS=18V), it serves as a high-performance upgrade to replace traditional silicon-based IGBTs or high-voltage MOSFETs, particularly for efficient, high-power-density designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
VDS=1200V: Covers three-phase grid rectification, photovoltaic busbars, and onboard high-voltage platforms, providing ample voltage spike margin to reduce avalanche breakdown risk.
VGS=-10V: High negative gate voltage tolerance allows safe use of negative voltage turn-off driving, effectively suppressing dv/dt-induced crosstalk and enhancing system anti-interference capability.
Vth=2~4V: Reasonable threshold voltage window with strong noise immunity; combined with the recommended VGS=18V drive condition, it quickly enters the fully conductive region.
RDS(on)=80mΩ @ VGS=18V: SiC material achieves low on-resistance with minimal impedance drift at high temperatures, significantly reducing full-load losses compared to silicon devices of the same specification.
ID=30A: Ample continuous current margin to meet medium-power main circuit requirements in photovoltaic inverters, charging modules, and industrial drives.
Package TO247: Low thermal resistance and high insulation creepage design, supporting high-power heat dissipation solutions, simplifying insulation installation processes, and improving system reliability.
Domain and module applications：
Photovoltaic Inverters: Achieves higher MPPT efficiency and overall conversion efficiency under high-voltage busbars, with low switching losses reducing heatsink size.
Energy Storage Converters: Low bidirectional power transmission losses; high-frequency design enables smaller filter inductors and transformers.
New Energy Vehicle Charging Modules: 1200V withstand voltage adapts to wide output ranges, reducing the number of paralleled devices and increasing power density.
Industrial Motor Drives: SiC fast switching characteristics reduce tail current, support higher carrier frequencies, and improve motor operating noise and controller temperature rise.
High-Frequency DC-DC Converters: Extremely low switching losses significantly increase switching frequency, facilitating magnetic component miniaturization.
UPS Uninterruptible Power Supplies: High reliability and excellent high-temperature characteristics meet long-life application requirements, enhancing system availability.
High-Voltage Auxiliary Power Supplies: Tolerates severe grid voltage fluctuations, reduces snubber protection circuits, and lowers system costs.
Selection Summary: The SCT2160KEC-VB combines SiC technology's high-voltage advantages with low on-resistance and high-speed switching capabilities, making it a premium general-purpose choice for 1200V-class high-voltage, high-power switching applications, especially for projects with strict requirements for efficiency, thermal management, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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