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SICW080N120H-BP-VB Product details
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Are you designing a high-efficiency, high-power-density industrial power supply or a new energy vehicle charging module, facing a 1200V high-voltage bus, while also having to balance switching losses and thermal dissipation challenges? Traditional silicon-based MOS transistors are approaching their performance limits, and SiC devices are the solution to break through. The VBsemi SICW080N120H-BP-VB utilizes advanced Silicon Carbide (SiC-S) technology, integrating 1200V withstand voltage, 30A current carrying capacity, and a typical 80mΩ on-resistance in a TO247 package, making high-voltage, high-power conversion more efficient, reliable, and capable of handling demanding applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- Drain-Source Voltage 1200V, covering high-voltage system safety margins
- Gate Voltage supports -10V negative voltage turn-off, enhancing dv/dt immunity
- Threshold Voltage 2~4V, flexible driver design
- On-Resistance 80mΩ (at VGS=18V), significantly lower conduction losses compared to similar silicon devices
- Maximum Drain Current 30A, suitable for medium to high-power topologies
- Uses SiC-S technology, fast switching speed, excellent reverse recovery characteristics
- TO247 package, balancing thermal performance and ease of installation
Domain and module applications：
Photovoltaic Inverters – As the main switch in boost or inverter stages, utilizing SiC's low switching losses to improve system conversion efficiency and reduce cooling costs.
Energy Storage Converters (PCS) – Enables high-frequency design in bidirectional DC-DC and DC-AC topologies, reducing magnetic component size.
Electric Vehicle On-Board Chargers (OBC) – Matches 800V high-voltage platforms, reducing charging/discharging losses and extending driving range.
Charging Station Modules – Withstands high-voltage surges, provides stable high-current output, improving equipment reliability and power density.
Industrial Motor Drives – Suitable for 690V/1200V bus systems, improving inverter efficiency and dynamic response.
High-Voltage DC-DC Converters – Leverages SiC's high-speed switching capability in LLC or Phase-Shifted Full-Bridge topologies to increase power levels.
Uninterruptible Power Supplies (UPS) – Provides efficient, stable power to critical loads, reducing long-term operating energy consumption.
One-sentence summary: The SICW080N120H-BP-VB is not just an ordinary power MOS transistor; it is your 'Silicon Carbide Engine' and 'Loss Terminator' on the path to high-voltage, high-efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
