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SICW120N120H-BP-VB Product details
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The VBsemi SICW120N120H-BP-VB is a Single N-channel Silicon Carbide Power Field Effect Transistor using SiC-S technology, specifically designed for high-voltage, high-power power conversion and industrial control applications. The device is housed in a TO247 package, offering excellent thermal dissipation and isolation capabilities, suitable for high-power-density systems. Leveraging the high breakdown field strength, low on-resistance, and fast switching characteristics of Silicon Carbide material, this product significantly reduces switching and conduction losses in 1200V high-voltage applications, improving overall system efficiency. Its threshold voltage is 2~4V, and it supports -10V negative voltage turn-off, enhancing immunity to false turn-on in high dv/dt, di/dt environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
Drain-Source Voltage (VDS): 1200V
Gate-Source Voltage (VGS): -10V
Threshold Voltage (Vth): 2~4V
On-Resistance (VGS=18V): 80mΩ (typical)
Maximum Drain Current (ID): 30A
Package Type: TO247
Process Technology: SiC-S
Domain and module applications：
1. Photovoltaic Inverters: Used for high-voltage DC-AC conversion, leveraging low conduction losses and fast switching characteristics to improve power generation efficiency.
2. Electric Vehicle Charging Stations: Acts as the main switch in high-voltage Power Factor Correction and DC-DC converters, supporting high-frequency design.
3. Industrial Motor Drives: Drives high-voltage AC motors or servo motors, suitable for variable frequency drives and PWM speed control systems.
4. Energy Storage and Uninterruptible Power Supplies (UPS): Used as the main switch in bidirectional converters, enabling efficient bidirectional energy flow.
5. High-Voltage DC-DC Converters: Applied in scenarios like vehicle power supplies and communication power supplies, reducing rectification losses and increasing power density.
6. Smart Grid Power Electronics Equipment: Used in solid-state transformers, high-voltage switches, etc., enhancing grid flexibility and reliability.
7. High-Frequency Induction Heating and Welding Power Supplies: Utilizes the high-frequency capability of SiC MOSFETs to reduce the size of passive components and improve overall performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
