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MXP120A045FW-GE3-VB Product details
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You are designing a 1200V high-voltage power supply system with stringent efficiency requirements but extremely limited cooling space. Traditional silicon-based MOS transistors struggle under high temperature and high voltage, but the VBsemi MXP120A045FW-GE3-VB, leveraging Silicon Carbide (SiC) technology, integrates 1200V withstand voltage, 30A current carrying capacity, and an on-resistance of only 80mΩ within a TO247 package. It makes high-voltage, high-power conversion more efficient and reliable, providing your design with the calm confidence of 'Silicon Carbide grade'.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- Voltage Rating 1200V, easily handles high-voltage bus and surge impacts
- Gate drive supports negative voltage turn-off (VGS up to -10V), strong anti-interference capability
- Threshold Voltage 2~4V, flexible drive design, compatible with common drivers
- On-Resistance 80mΩ (at 18V drive), extremely low conduction losses, reduced thermal stress
- Maximum Current 30A, single device can handle medium power output
- Silicon Carbide (SiC-S) technology, fast switching speed, excellent high-temperature characteristics, significantly improved system efficiency
Domain and module applications：
- Photovoltaic Inverters – As an efficient switching device, reducing conduction and switching losses, improving grid-tied power generation efficiency.
- Electric Vehicle Charging Stations – Stable output in high-voltage DC conversion, withstands stringent temperature rise, improving charging reliability.
- Energy Storage Converters (PCS) – Achieves low losses and high response during bidirectional energy conversion, supporting grid-scale energy storage systems.
- Three-Phase Industrial Motor Drives – 1200V withstand voltage covers mainstream industrial bus voltages, 30A current drives small to medium power motors, reducing drive size.
- High-Voltage DC-DC Converters – Utilizes SiC's fast switching characteristics to increase switching frequency, reduce magnetic component size, and increase power density.
- Railway Traction Auxiliary Power Supplies – Withstands high voltage, high vibration, and wide temperature ranges, providing durable and reliable power for on-board auxiliary systems.
- Uninterruptible Power Supplies (UPS) – Achieves efficient inversion during mains-to-battery switching, extending backup time and reducing cooling costs.
One-sentence summary: The MXP120A045FW-GE3-VB is not an ordinary MOS transistor; it is the 'Efficiency Core' and 'Reliability Foundation' for your high-voltage, high-power designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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