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MXP120A080FW-GE3-VB Product details
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You are designing a high-efficiency industrial power supply or electric vehicle charging system, with a bus voltage reaching kilovolt levels, yet demanding extremely stringent switching and conduction losses. Ordinary silicon-based MOS transistors often struggle under high voltage and high current, but the VBsemi MXP120A080FW-GE3-VB is designed for this purpose – based on Silicon Carbide (SiC) technology, it integrates 1200V withstand voltage, 30A current carrying capacity, and an on-resistance of only 80mΩ in a TO247 package, making high-voltage, high-power conversion uncompromising.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
Voltage Rating 1200V, easily handles high-voltage bus, ample safety margin
Gate Drive Voltage -10V withstand, combined with optimized threshold voltage (2~4V), more flexible drive design
On-Resistance 80mΩ (at 18V drive), SiC material brings extremely low conduction losses
Maximum Current 30A, TO247 package offers excellent thermal capability, suitable for high-power scenarios
Technology SiC-S, fast switching speed, excellent reverse recovery characteristics, significantly reduces switching losses
Domain and module applications：
Photovoltaic Inverters – As the main switch in boost or inverter stages, improving system conversion efficiency, reducing cooling costs.
Electric Vehicle On-Board Chargers (OBC) – Leveraging SiC's high-frequency, high-voltage advantages in AC-DC and DC-DC topologies to achieve high power density.
Energy Storage Converters (PCS) – Meets bidirectional energy conversion needs, reducing losses, improving system reliability.
Industrial Motor Drives – Withstands bus voltage fluctuations, combined with fast switching characteristics for precise control.
High-Voltage DC-DC Converters – Replaces silicon-based devices in synchronous rectification or full-bridge LLC topologies, improving efficiency by 2~3%.
Uninterruptible Power Supplies (UPS) – Application in high-voltage input stages, enhancing overload capability and overall stability.
Charging Station Modules – In high-power Power Factor Correction (PFC) circuits, reduces temperature rise, extends equipment life.
One-sentence summary: The MXP120A080FW-GE3-VB is not an ordinary MOS transistor; it is the 'Silicon Carbide Heart' and 'Efficiency Engine' for your high-voltage, high-power designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
