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DMWSH120H90SM3Q-VB Product details
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The VBsemi DMWSH120H90SM3Q-VB is a Single N-channel Silicon Carbide Field Effect Transistor based on SiC-S technology, specifically designed for high-voltage, high-frequency, high-efficiency power conversion applications. Its TO247 package offers excellent thermal dissipation and power density, suitable for high-reliability applications such as photovoltaic inverters, energy storage converters, electric vehicle charging stations, and industrial power supplies. The device features a 1200V drain-source breakdown voltage and a 30A continuous drain current capability. With a gate drive of 18V, the on-resistance is as low as 80mΩ, significantly reducing conduction losses; simultaneously, the SiC material characteristics provide excellent high-temperature performance and switching speed, helping to improve overall system efficiency and power density.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
Drain-Source Voltage (VDS): 1200V
Gate-Source Voltage (VGS): -10V (Maximum negative)
Threshold Voltage (Vth): 2~4V
On-Resistance (VGS=18V): 80mΩ (typical)
Maximum Drain Current (ID): 30A
Package Type: TO247
Process Technology: SiC-S
Domain and module applications：
1. Photovoltaic Inverters: Used for converting high-voltage DC bus to AC, leveraging SiC's low losses and fast switching characteristics to improve inverter efficiency and reduce cooling requirements.
2. Energy Storage Converters: Acts as the main power switch in bidirectional DC-DC or DC-AC topologies, supporting high-power-density design and improving battery charge/discharge conversion efficiency.
3. Electric Vehicle Charging Stations: Suitable for the PFC and LLC stages of high-power DC fast charging modules, reducing switching losses and adapting to the trend of high frequency and miniaturization.
4. Industrial Motor Drives: Used in high-voltage variable frequency drives or servo drives, achieving high-reliability power switching, reducing dv/dt interference, and improving motor control precision.
5. High-Voltage DC-DC Converters: For server power supplies, communication power supplies, etc., achieving efficient voltage conversion in 800V~1000V bus systems.
6. Railway Auxiliary Converters: Meets the demanding requirements of high voltage, high temperature shock, and harsh environments, providing stable switching performance and long-term reliability.
7. Uninterruptible Power Supplies (UPS): Serves as the core device in rectifier/inverter stages, improving overall efficiency and overload capability, ensuring continuous power supply for critical loads.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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