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SCT3105KLGC11-VB Product details
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Still troubled by high switching losses and thermal design headaches in high-voltage systems? Let the VBsemi SCT3105KLGC11-VB solve your worries! This TO247-packaged SiC N-MOSFET, based on advanced SiC-S technology, boasts a high withstand voltage of 1200V and an ultra-low on-resistance of only 80mΩ, with switching speed and high-temperature stability far exceeding traditional silicon-based devices. It supports 30A high current output, with low conduction losses and reduced thermal stress, making it particularly suitable for high-power-density applications like photovoltaic inverters, charging stations, and industrial power supplies. It is the 'Silicon Carbide Sharp Tool' for high-voltage power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
Voltage Rating: 1200V (Handles high-voltage systems with ease, ample margin)
Drive Range: VGS down to -10V (Compatible with common drive circuit designs)
Turn-on Threshold: 2~4V (Reasonable threshold window, strong anti-interference capability)
Ultra-Low On-Resistance: 80mΩ @ 18V (Extremely low conduction losses, significantly improved efficiency)
High Current Capability: 30A (TO247 package balances heat dissipation and current carrying capacity)
Technology Platform: SiC-S Silicon Carbide Process (High-temperature, low switching loss, high reliability)
Package: TO247 (Suitable for industrial-grade power modules and heatsink installation)
Domain and module applications：
– Five High-Voltage Scenarios, One Solution
Photovoltaic Inverters: MPPT boost and inverter bridges, helping system efficiency exceed 98%
Charging Stations/Vehicle Power Supplies: High-voltage DC-DC and OBC, reducing size and increasing power density
Industrial Motor Drives: Variable frequency drives, servo drives, high voltage tolerance, low switching losses
Energy Storage and UPS: Bidirectional converters, battery management, ensuring high-reliability energy conversion
High-Voltage Auxiliary Power Supplies: Industrial control, medical equipment, stable output, long-life operation
SCT3105KLGC11-VB – Empowered by Silicon Carbide, making high-voltage power design more effortless!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
