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LSIC1MO120E0120-VB Product details
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** Still struggling with severe heat generation and device reliability issues in high-voltage, high-power systems? Let the VBsemi LSIC1MO120E0120-VB solve your worries! This TO247-packaged SiC N-MOSFET, based on advanced SiC-S technology, is specifically designed for 1200V high-voltage platforms, capable of carrying 30A continuous current with an ultra-low on-resistance of 80mΩ (@VGS=18V). Switching and conduction losses are significantly reduced compared to traditional Si devices. Featuring high-temperature tolerance, radiation resistance, and excellent high-frequency characteristics, it is an ideal choice for high-end applications such as photovoltaic storage, charging stations, and industrial power supplies.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- Voltage Rating: 1200V (Ultra-high voltage margin, easily handles grid fluctuations)
- Gate Negative Voltage Tolerance: -10V (Strong anti-interference capability, more reliable negative voltage turn-off)
- Turn-on Threshold: Vth=2~4V (Reasonable threshold window, flexible driver design)
- Ultra-Low On-Resistance: 80mΩ @ VGS=18V (Further reduced conduction losses)
- High Current Capability: 30A (TO247 package offers good heat dissipation, high power density)
- Package: TO247 (Suitable for industrial-grade heatsink installation, low thermal resistance)
- Technology: SiC-S Silicon Carbide Process (High-temperature, high-frequency, high-reliability)
**
Domain and module applications：
– Six High-Voltage Scenarios, One Solution**
- **Photovoltaic Inverters**: MPPT boost and inverter stages, significant efficiency improvement, reducing cost per kilowatt-hour
- **Electric Vehicle Charging Stations**: High-frequency, high-voltage power conversion, faster charging, more compact unit
- **Energy Storage Converters (PCS)**: Low losses in bidirectional conversion, lower system temperature rise, longer lifespan
- **Switching Power Supplies/Server Power Supplies**: Efficient PFC and LLC topologies, easily meets 80Plus Titanium standards
- **Industrial Motor Drives**: High dv/dt tolerance, suitable for 690V industrial control variable frequency systems
- **UPS Uninterruptible Power Supplies**: Fast switching characteristics improve dynamic response, ensuring power supply for critical loads
LSIC1MO120E0120-VB – A Silicon Carbide masterpiece, an efficiency vanguard on the high-voltage battlefield, making your power electronics design more confident!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
