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P3M12080K3-VB Product details
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** You are designing a high-efficiency, high-power-density industrial power supply or on-board charging system. Facing a 1200V high-voltage bus, traditional silicon-based MOS transistors suffer from high switching losses, high thermal stress, and difficulty in compressing system volume. The VBsemi P3M12080K3-VB is designed for this purpose – based on advanced SiC-S Silicon Carbide technology, it integrates 1200V withstand voltage, 30A current carrying capacity, and an on-resistance of only 80mΩ in a TO247 package, making high-voltage power conversion efficient, reliable, and more space-saving.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- Drain-Source Voltage 1200V, easily handles high-voltage bus fluctuations, providing ample safety margin
- Gate drive allows negative voltage -10V, compatible with common drive schemes, strong anti-interference capability
- Threshold Voltage 2~4V, flexible gate drive design, compatible with various driver ICs
- On-Resistance 80mΩ (at 18V drive), significantly reduced conduction losses, greatly improved conversion efficiency
- Maximum Continuous Drain Current 30A, suitable for medium to high-power applications, TO247 package offers excellent thermal performance
- Uses SiC-S Silicon Carbide technology, extremely low switching losses, supports high-frequency operation, aiding magnetic component miniaturization
Domain and module applications：
- **Photovoltaic Inverters** – As the main switch in boost or inverter stages, using low on-resistance and low switching losses to improve overall efficiency and reduce heatsink size.
- **On-Board Chargers / DC-DC Converters** – Withstands 800V and higher voltage buses, SiC material's high-temperature characteristics ensure stable operation in harsh environments.
- **Industrial Switching Power Supplies** – Used as high-side MOSFETs in LLC or Phase-Shifted Full-Bridge topologies, achieving higher switching frequencies and reducing transformer and filter sizes.
- **Energy Storage Systems / Battery Formation Equipment** – Efficient bidirectional energy conversion, significantly reducing power stage heat generation, improving long-term system reliability.
- **Motor Drives** – Suitable for high-voltage industrial motors or electric bus/logistics vehicle drive units, providing high surge capability and low switching losses.
- **Uninterruptible Power Supplies (UPS)** – Acts as the power switch in rectifier/inverter stages, enhancing overload capability and improving power quality.
- **High-Voltage Charging Stations** – Used in 1000V DC bus charging modules, helping to achieve high-power-density, low-loss charging topologies.
**One-sentence summary: The P3M12080K3-VB is not an ordinary power device; it is your 'Silicon Carbide Engine' and 'Thermal Terminator' for high-voltage systems moving towards high efficiency and high reliability.**
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
