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NVHL070N120M3S-VB Product details
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The NVHL070N120M3S-VB is a Single N-MOSFET deeply optimized for high-voltage, high-power switching applications. It utilizes advanced SiC-S (Silicon Carbide) technology, combining extremely low switching losses with excellent high-temperature reliability. The TO247 package provides superior thermal and insulation performance for high-voltage, high-current applications. The combination of 1200V withstand voltage, 30A current capability, and 80mΩ on-resistance makes it an ideal choice for photovoltaic inverters, charging stations, and new energy vehicle power electronics systems, particularly suitable for industrial applications with stringent requirements for energy efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
VDS=1200V: Suitable for three-phase 380V/480V grids and high-voltage DC buses, providing ample margin for voltage spikes, significantly reducing the risk of avalanche breakdown.
VGS=-10V: Supports safe negative voltage turn-off, effectively suppressing spurious turn-on under high voltage and high frequency, enhancing system noise immunity; combined with an 18V forward drive voltage (RDS(on) test condition), it fully leverages SiC's low conduction loss advantage.
Vth=2~4V: Reasonable threshold voltage range, strong noise immunity, compatible with mainstream SiC driver ICs, simplifying driver circuit design.
RDS(on)=80mΩ @ VGS=18V: Ultra-low on-resistance significantly reduces conduction losses, resulting in lower temperature rise under full load, allowing for smaller heatsinks and higher power density.
ID=30A: Ample continuous current capability suitable for high-power converters and motor drives in heavy-load scenarios, with good pulsed current margin.
Package TO247: Through-hole mounting, low thermal resistance, large creepage distance, suitable for high-voltage, high-insulation requirements; low lead parasitic inductance supports high-frequency switching operation.
Technology SiC-S: Wide bandgap material achieves high breakdown field strength and low reverse recovery charge, significantly improving switching speed, excellent high-temperature characteristics, with an operating junction temperature up to 175°C.
Domain and module applications：
Photovoltaic Inverters: High voltage withstand and low losses improve DC-AC conversion efficiency, reduce thermal management investment, aiding the design of high-power-density string inverters.
Charging Station Modules: 1200V withstand voltage suitable for high-power topologies (e.g., LLC, Vienna Rectifier), reducing switching losses, improving overall charging efficiency.
New Energy Vehicle Electric Drive/OBC: SiC's high-frequency characteristics reduce magnetic component size, enabling lightweight on-board DC-DC converters and on-board chargers.
Industrial Motor Drives: Low on-resistance and fast switching reduce controller temperature rise, support higher power output, and improve system reliability.
Data Center UPS: Direct conversion from high-voltage bus reduces transformer stages, high-frequency, high-efficiency operation lowers operating costs.
Energy Storage Converters: Leverages low-loss advantage in bidirectional power conversion; wide bandgap high-temperature resistance adapts to harsh operating environments.
High-Voltage Auxiliary Power Supplies: Wide safe operating area and strong surge withstand capability provide stable isolated power supply for high-voltage buses.
Selection Summary: The NVHL070N120M3S-VB achieves an excellent balance between voltage stress, conduction loss, switching speed, and package thermal performance. It is a high-performance SiC solution for 1200V class high-voltage, high-power switching applications, particularly suitable for projects pursuing high efficiency, high reliability, and high power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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