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S2M0080120D-VB Product details
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The S2M0080120D-VB is a Single N-channel SiC MOSFET deeply optimized for high-voltage, high-power switching applications, utilizing advanced SiC-S technology. It combines extremely low switching losses with excellent high-temperature reliability. The TO247 package provides superior heat dissipation channels and power density, suitable for demanding industrial applications. The combination of 1200V withstand voltage, 30A current carrying capacity, and 80mΩ on-resistance makes it an ideal power switch choice for photovoltaic inverters, energy storage converters, and high-end power supply systems, especially suitable for projects with dual high requirements for efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
VDS=1200V: Covers 400V~800V high-voltage bus systems. Combined with SiC material's high critical field strength, it can significantly simplify topology and provide ample voltage margin, reducing the risk of avalanche breakdown.
VGS=-10V: Supports negative gate voltage turn-off drive schemes, effectively suppressing dv/dt-induced bridge arm crosstalk, enhancing system noise immunity during fast switching.
Vth=2~4V: Reasonable threshold voltage distribution, enabling fast turn-on and reliable turn-off with standard SiC driver chips, balancing noise immunity and driver compatibility.
RDS(on)=80mΩ @ VGS=18V: Extremely low on-resistance significantly reduces full-load conduction losses. Combined with SiC's tail-current-free characteristic, it maintains low losses even at high temperatures, facilitating heatsink miniaturization.
ID=30A: Ample continuous current capability to handle steady-state loads and short-term overcurrent surges in high-voltage, high-power converters.
Package TO247: Through-hole mounting provides high mechanical strength, low thermal resistance, short heat dissipation path, suitable for long-life industrial designs, supporting high-frequency, high-voltage, high-current applications.
Domain and module applications：
Photovoltaic Inverters: SiC material brings extremely low reverse recovery losses, boosting stage efficiency can exceed 99%, aiding system power density upgrade.
Energy Storage Converters (PCS): Achieves low-loss energy transfer in bidirectional conversion, reducing overall system temperature rise, improving charge/discharge cycle efficiency.
On-Board Chargers (OBC) & Charging Stations: In high-voltage DC fast charging scenarios, high-frequency switching capability significantly reduces magnetic component size, improving power conversion efficiency.
High-Frequency Industrial Power Supplies: Low switching losses allow operation at higher frequencies, reducing transformer and filter inductor size, lowering system cost.
Motor Drives & UPS: 1200V withstand voltage adapts to 380V/480V industrial grids, reliably handling bus surges, improving UPS conversion efficiency.
High-Voltage DC-DC Converters: Replacing Si-based IGBTs/MOSFETs in synchronous rectification applications, significantly improving heavy-load efficiency, facilitating module miniaturization and thermal simplification.
Selection Summary: The S2M0080120D-VB achieves a high-quality balance between high withstand voltage, low on-resistance, high-speed switching capability, and package thermal dissipation. It is a cost-effective general-purpose choice for high-frequency, high-efficiency applications in the 1200V power class, particularly suitable for industrial and new energy projects with strict requirements for power density, long-term reliability, and system efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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