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SCT2080KEHRC11-VB Product details
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** Still troubled by severe heat generation and high switching losses in high-voltage, high-power systems? Let the VBsemi SCT2080KEHRC11-VB solve your worries! This TO247-packaged SiC Power MOSFET, utilizing advanced SiC-S technology, is specifically designed for the 1200V high-voltage platform. Its typical on-resistance is only 80mΩ (@18V), supporting a 30A continuous drain current. It features fast switching speed, high-temperature tolerance, and extremely low losses, making it a true 'efficiency vanguard' in the fields of high-voltage power conversion and industrial drives. Whether for photovoltaic inverters, charging stations, or motor drives, it helps systems operate efficiently and stably with excellent reliability.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- **Voltage Rating**: 1200V (Handles high-voltage systems with ease, ample margin)
- **Drive Range**: -10V gate negative voltage turn-off capability (Enhanced noise immunity, more reliable switching)
- **Threshold Voltage**: 2~4V (Good compatibility with standard drive levels, control-friendly)
- **Ultra-Low On-Resistance**: 80mΩ @ 18V (Significantly reduces conduction losses, less heat generation)
- **High Current Capability**: 30A (High power density output, strong current handling)
- **Package Type**: TO247 (Excellent thermal performance, suitable for high-power through-hole/mounting applications)
- **Technology Platform**: SiC-S (Silicon Carbide technology, combining high-temperature, high-frequency, and high efficiency)
**
Domain and module applications：
— Six typical scenarios, One Device Handles All**
- **Photovoltaic Inverters**: Improves inverter efficiency, reduces system temperature rise, aids long-term power generation of the plant
- **Charging Stations & Vehicle Power Supplies**: Stable high-voltage, high-current conversion, reliably ensuring fast charging
- **Industrial Motor Drives**: Low switching losses, precise speed control, suitable for demanding industrial control environments
- **UPS Uninterruptible Power Supplies**: Efficient AC/DC conversion, ensuring continuous power supply to critical loads
- **High-Voltage DC-DC Converters**: Synchronous rectification scheme, significantly improving power density and efficiency
- **Energy Storage Systems & Grid Applications**: High withstand voltage, strong thermal stability, supporting high-power energy dispatch
**SCT2080KEHRC11-VB — The SiC High-Voltage Choice, Making Your Power Design More Powerful and Efficient!**
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
