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C3M0075120D-A-VB Product details
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You are designing a high-voltage, high-power system, facing 1200V bus voltage, but struggling with the high switching losses and poor high-temperature performance of ordinary silicon devices. The VBsemi C3M0075120D-A-VB is designed for this—it utilizes advanced SiC-S Silicon Carbide technology, integrating 1200V withstand voltage, 30A current carrying capacity, and an ultra-low 80mΩ on-resistance in a TO247 package, allowing high-efficiency power electronics designs like photovoltaic inverters and charging stations to proceed without compromise.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- Withstand Voltage 1200V, confidently handling high-voltage applications
- Gate drive supports -10V negative voltage turn-off, recommended 18V positive turn-on, reliable switching
- Threshold Voltage 2~4V, flexible driver design
- On-Resistance 80mΩ (at 18V drive), maintaining low losses even under high voltage
- Maximum Current 30A, TO247 package handles high-power output
- Technology SiC-S, Silicon Carbide material brings lower switching losses and higher operating temperature
Domain and module applications：
- Photovoltaic Inverters – As the main switch, significantly improving MPPT efficiency and reducing thermal stress.
- Electric Vehicle Charging Stations – Utilizing SiC's high-frequency characteristics to reduce magnetic component size and increase power density.
- Energy Storage Converters (PCS) – Maintaining low losses during bidirectional conversion, aiding grid-level energy dispatch.
- Industrial Switch Mode Power Supplies – Maintaining high efficiency at high switching frequencies, reducing heatsink area.
- UPS Uninterruptible Power Supplies – Quickly responding to load transients, providing stable and clean power backup.
- Induction Heating / Induction Cooktops – High-frequency switching capability can improve heating efficiency and reduce noise.
- Motor Drives – Withstanding high bus voltage and reducing temperature rise, suitable for industrial motor control.
- High-Voltage DC-DC Converters – Achieving high conversion efficiency in boost/buck topologies, simplifying thermal design.
In a nutshell: The C3M0075120D-A-VB is not just an ordinary MOS tube; it is the 'Silicon Carbide Core Engine' driving your high-voltage, high-power systems towards high efficiency, high reliability, and high density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
