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SCTW40N120G2VAG-VB Product details
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You are designing a future-oriented high-power system, whether it's a photovoltaic inverter, energy storage converter, or a new energy vehicle drive unit, all must operate stably under the harsh conditions of high voltage, high current, and high-frequency switching. Ordinary silicon-based MOS tubes suffer from soaring switching losses under high voltage, making thermal design challenging. The VBsemi SCTW40N120G2VAG-VB is designed for this—it is based on advanced SiC (Silicon Carbide) technology, integrating 1200V withstand voltage, 30A current carrying capacity, and an ultra-low 80mΩ on-resistance in a TO247 package, allowing high-voltage systems to achieve new heights in both efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- Withstand Voltage 1200V, covering 800V bus voltage, providing ample safety margin
- Gate Voltage -10V, compatible with SiC driver solutions for flexibility and reliability
- Threshold Voltage 2~4V, driver-friendly design with strong anti-interference capability
- On-Resistance 80mΩ (at 18V drive), maintaining extremely low losses even under high voltage and high current
- Maximum Current 30A, capable of handling high-power output with a single device
- Technology SiC-S and TO247 Package, low thermal resistance, high switching speed, suitable for high-frequency hard-switching topologies
Domain and module applications：
- Photovoltaic Inverters / Energy Storage Converters – As the main power switch in boost or inverter stages, significantly reducing switching losses and improving overall system efficiency.
- On-Board Chargers (OBC) / DC-DC Converters – Leveraging SiC's high-frequency characteristics to reduce magnetic component size, aiding high power density design in vehicle power supplies.
- Charging Station Modules – Achieving low-loss rectification and switching control in high-voltage DC output stages, reducing thermal management pressure.
- Motor Drives / Industrial Variable Frequency Drives – Withstanding bus voltage fluctuations and surge spikes, improving long-term system reliability.
- High-Voltage UPS / Industrial Switch Mode Power Supplies – Providing efficient and stable switching performance in PFC and LLC topologies.
- Traction Auxiliary Converters – Suitable for applications with stringent voltage and reliability requirements like rail transit and mining machinery.
In a nutshell: The SCTW40N120G2VAG-VB is not just an ordinary MOS tube; it is the 'power heart' and 'efficiency engine' of high-voltage, high-power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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