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SCT4062KEC11-VB Product details
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The VBsemi SCT4062KEC11-VB is a Single N-channel Silicon Carbide (SiC) Field Effect Transistor, part of the VBsemi brand's high-performance power device series. This product is manufactured using advanced SiC-S technology, featuring a Drain-Source Voltage (VDS) of 1200V and a maximum Drain Current capability of 30A, making it ideal for high-voltage, high-frequency, and high-efficiency power conversion scenarios. The device is housed in a TO247 package, offering excellent thermal performance and reliability, meeting the stringent requirements of industrial applications for power devices under high temperature and high power density. It is an ideal upgrade replacement for traditional silicon-based MOSFETs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- Drain-Source Voltage (VDS): 1200V
- Gate-Source Voltage (VGS): -10V
- Threshold Voltage (Vth): 2~4V
- On-Resistance (VGS=18V): 80mΩ
- Maximum Drain Current (ID): 30A
- Technology Type: SiC-S
Domain and module applications：
1. Photovoltaic Inverters: The SCT4062KEC11-VB is suitable for DC-AC conversion circuits in high-voltage photovoltaic inverters. Its low on-resistance and the wide bandgap characteristics of SiC material can significantly reduce switching losses, improving the overall system power generation efficiency and power density.
2. Electric Vehicle Charging Stations: In DC fast charging stations for EVs, this device can be used in high-voltage Power Factor Correction (PFC) and DC-DC conversion modules, supporting higher switching frequencies, reducing magnetic component size, and improving charging power and reliability.
3. Switch Mode Power Supplies (SMPS): Suitable for the power switch stage in high-voltage input industrial SMPS. SiC MOSFETs can effectively reduce switching losses and electromagnetic interference, making them suitable for high-efficiency, high-power-density power supply designs.
4. Industrial Motor Drives: In high-voltage variable frequency drives and servo drives, this device can serve as the switching transistor in the inverter bridge arm, providing stable high-voltage switching capability to meet the demands of industrial motors for high reliability and strong overload capacity.
5. High-Voltage DC-DC Converters: Applied in high-voltage DC conversion scenarios such as rail transit and power electronic transformers, enabling efficient voltage conversion. The high-temperature resistance of SiC material reduces the design pressure on the thermal management system.
6. Uninterruptible Power Supplies (UPS): Suitable for the rectifier and inverter stages of high-power UPS, helping to improve system efficiency, reduce cooling requirements, and enhance the ability to cope with grid fluctuations and load transients.
7. Energy Storage Systems (ESS): In energy storage converters, this device can be used for high-voltage side power conversion, supporting bidirectional energy flow, improving the charging/discharging efficiency and long-term operational stability of the energy storage system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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