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SCT3105KLHRC11-VB Product details
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** Are you designing a high-efficiency photovoltaic inverter or on-board charger, facing a 1200V high-voltage bus while needing to balance switching losses and system reliability? Standard silicon-based MOSFETs are no longer sufficient, yet you worry about complex gate drive and high cost with SiC devices? VBsemi SCT3105KLHRC11-VB is the SiC power switch born for high-voltage, high-power scenarios – it features a TO247 package, with a single device capable of handling 1200V withstand voltage and 30A continuous current, and an ultra-low on-resistance of 80mΩ (18V drive), allowing high-voltage systems to find the optimal balance between efficiency and heat dissipation.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- Withstand Voltage 1200V, easily handles high-voltage bus and surge transients
- Gate drive recommended at 18V, can withstand -10V negative turn-off voltage, effectively preventing spurious turn-on
- Threshold Voltage 2~4V, stable triggering with standard drive schemes
- On-Resistance 80mΩ (at 18V drive), significantly lower conduction losses compared to similar silicon-based devices
- Maximum Continuous Current 30A, TO247 package balances heat dissipation and high current output
- SiC-S Technology, extremely low switching losses, supports high-frequency operation, reducing magnetic component size
**
Domain and module applications：
- Photovoltaic Inverters – As the main switch in Boost or inverter stages, improving MPPT efficiency and reducing temperature rise.
- Electric Vehicle On-Board Chargers / DC-DC Converters – High voltage withstand, low losses, contributing to vehicle lightweighting and extended range.
- Industrial Power Supplies / Charging Stations – High-frequency switching characteristics reduce transformer size, increasing power density.
- Uninterruptible Power Supplies (UPS) – Reliable in AC-DC conversion, coping with grid fluctuations.
- High-Voltage Motor Drives / Energy Storage Systems – Withstands high-voltage bus, enabling efficient energy recovery.
- High-Frequency LLC Resonant Power Supplies – Low Qg and low output capacitance, suitable for high-frequency soft-switching topologies, improving overall efficiency.
**In a nutshell: The SCT3105KLHRC11-VB is not just an ordinary MOSFET; it is the 'Silicon Carbide Core' and 'Efficiency Engine' for your high-voltage, high-power power supply design.**
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
