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GP2T080A120U-VB Product details
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Still troubled by low efficiency and high heat dissipation pressure in high-voltage, high-power conversion? VBsemi GP2T080A120U-VB is here to help! This TO247-packaged Silicon Carbide (SiC) N-MOSFET, utilizing industry-leading SiC-S technology, boasts a withstand voltage of up to 1200V, an on-resistance of only 80mΩ, and significantly reduced switching losses, allowing high-voltage systems to achieve 'cool and efficient' operation. Whether in photovoltaic inverters or on-board chargers, it can reliably handle a 30A high current, making it the ideal choice for high-end power supply designs.####
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- **Voltage Rating**: 1200V (covers high-voltage applications with ample safety margin)
- **Drive Voltage**: Recommended 18V drive for excellent on-state characteristics
- **Threshold Voltage**: 2~4V (moderate threshold, good noise immunity)
- **Ultra-Low On-Resistance**: 80mΩ @ 18V (extremely low conduction losses, significantly reduced heat generation)
- **High Current Capability**: 30A (single device can handle high power)
- **Package**: TO247 (excellent thermal performance, suitable for high-power mounting)
- **Technology**: SiC-S Silicon Carbide process (high-temperature, high-frequency, high-efficiency)
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Domain and module applications：
– Six High-Voltage Scenarios, One Solution
- **Photovoltaic Inverters**: Improved MPPT efficiency, significantly reduced overall system temperature rise
- **Electric Vehicle Charging Stations**: Stable high-voltage, high-current output for faster, safer charging
- **On-Board Chargers (OBC)**: Bidirectional charging/discharging circuits, higher power density
- **Industrial Switch Mode Power Supplies (SMPS)**: LLC full-bridge topology, efficiency easily exceeds 95%
- **Uninterruptible Power Supplies (UPS)**: Instantaneous response, strong load capacity, reliable operation
- **Energy Storage Converters (PCS)**: Bidirectional DC-DC conversion, lower energy losses
GP2T080A120U-VB – Empowered by Silicon Carbide, making high-voltage, high-power design effortless!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
