中文
English
LSIC1MO120E0160-VB Product details
Back to previous pageProduct introduction：
** Are you designing a high-power-density industrial power supply or a new energy vehicle charging module, facing a 1200V high-voltage bus while needing to balance 30A high current and low losses? Traditional silicon-based MOSFETs often lack sufficient voltage withstand or have high switching losses. The VBsemi LSIC1MO120E0160-VB utilizes third-generation SiC-S technology, integrating 1200V withstand voltage, 30A current capability, and an ultra-low on-resistance of just 80mΩ into a TO247 package, allowing high-voltage, high-power designs without compromise.**
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- Withstand Voltage 1200V, easily handles high-voltage bus and surge transients
- Gate drive range supports -10V, compatible with dedicated SiC drive solutions
- Threshold Voltage 2~4V, offering more flexibility in drive design
- On-Resistance 80mΩ (at 18V drive), significantly reducing losses under high voltage and high current
- Maximum Current 30A, TO247 package balances heat dissipation and space
**
Domain and module applications：
Photovoltaic Inverters – As the main switch in Boost or inverter stages, utilizing SiC's low-loss characteristics to improve overall system efficiency and reduce heatsink size.
Energy Storage Converters (PCS) – Enables high-frequency switching in bidirectional DC-DC and three-phase bridge arms, reducing switching losses and harmonic distortion.
New Energy Vehicle On-Board Chargers (OBC) – Withstands 400V~800V high-voltage platforms, improving charging efficiency, reducing charging time.
Industrial Motor Drives – Tolerates bus voltage fluctuations, combined with fast switching characteristics to optimize current control accuracy and system reliability.
Uninterruptible Power Supplies (UPS) – Provides a stable, low-loss power path during high-voltage DC bus switching, ensuring critical load power supply.
High-Voltage DC-DC Converters – Replaces traditional silicon-based devices, significantly reducing transformer and filter size, increasing power density.
Smart Grid / Solid-State Transformers – For medium-to-high voltage applications, supporting higher switching frequencies and smaller passive component sizes.
**In a nutshell:** The LSIC1MO120E0160-VB is not just an ordinary MOSFET; it is the 'SiC Core' balancing efficiency and reliability in your high-voltage, high-power system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
