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SCT2080KEGC11-VB Product details
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** Are you designing a high-efficiency photovoltaic inverter or a high-power charging station, where the system bus voltage reaches thousands of volts, and switching losses and thermal stress are major headaches? Traditional silicon-based MOSFETs or IGBTs struggle to balance high voltage, high frequency, and low losses. The VBsemi SCT2080KEGC11-VB utilizes SiC-S Silicon Carbide technology, integrating 1200V withstand voltage, 30A current capability, and 80mΩ on-resistance into a TO247 package, allowing high-voltage, high-power converters to operate stably at higher frequencies while significantly reducing thermal management requirements, bringing a 'generational leap' experience to your design.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- Withstand Voltage 1200V, covering mainstream high-voltage applications with ample safety margin
- Gate drive supports -10V negative voltage turn-off, effectively suppressing spurious turn-on
- Threshold Voltage 2~4V, stable switching characteristics, strong noise immunity
- On-Resistance 80mΩ (at 18V drive), extremely low conduction losses, higher efficiency
- Maximum Current 30A, combined with TO247 package, excellent power density
- SiC-S technology delivers fast switching speed and superior reverse recovery characteristics, suitable for high-frequency applications
**
Domain and module applications：
- Photovoltaic Inverters – As the main switch in Boost or inverter stages, improving MPPT efficiency, reducing module temperature rise, leading to higher power generation from the plant.
- On-Board/Energy Storage Bidirectional DC-DC Converters – Leveraging SiC's low losses and high voltage withstand for high-power bidirectional energy flow, enabling fast charging and energy storage systems.
- Charging Station Power Modules – Stable operation at 1200V bus voltage, combined with high-frequency switching, significantly reduces transformer and filter size.
- Industrial Motor Drives – Withstands grid fluctuations and surge transients, improving drive reliability, reducing switching noise.
- High-Voltage UPS Uninterruptible Power Supplies – Efficiently implements AC-DC-AC conversion, saving energy, extending backup time.
- Electric Vehicle Main Traction Inverters – Leveraging SiC's high-frequency, high-temperature advantages to improve driving range and acceleration performance.
**In a nutshell:** The SCT2080KEGC11-VB is not just an ordinary power switch; it is the 'Silicon Carbide Engine' for your high-voltage system to move towards high efficiency, high frequency, and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
