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LSIC1MO120E0080-VB Product details
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The VBsemi LSIC1MO120E0080-VB is a Single N-channel Silicon Carbide (SiC) Field Effect Transistor, part of the VBsemi brand product series. This product is manufactured using advanced SiC-S technology, featuring a Drain-Source Voltage (VDS) of 1200V and capable of operating at a Gate-Source Voltage (VGS) of -10V. The product is housed in a TO247 package, suitable for high-power, high-efficiency power electronics applications, capable of significantly improving system operating frequency and power density.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
Drain-Source Voltage (VDS): 1200V
Gate-Source Voltage (VGS): -10V
Threshold Voltage (Vth): 2~4V
On-Resistance (VGS=18V): 80 mΩ
Maximum Drain Current (ID): 30A
Technology: SiC-S
Package: TO247
Domain and module applications：
1. Photovoltaic Inverters: The LSIC1MO120E0080-VB is suitable for power conversion modules in photovoltaic inverters. Its 1200V high withstand voltage and low on-resistance characteristics can effectively improve the conversion efficiency and reliability of the inverter, suitable for string and central photovoltaic systems.
2. Electric Vehicle Charging Stations: In DC fast charging modules for EVs, this device can be used as a high-voltage switching transistor for AC-DC and DC-DC power conversion circuits, supporting high-efficiency, high-frequency power conversion to meet high-power charging demands.
3. Industrial Motor Drives: This model is suitable for power switch units in industrial variable frequency drives and servo drives. The high-temperature stability and low switching losses of SiC material help improve the overall performance and lifespan of the motor drive system.
4. Uninterruptible Power Supplies (UPS): In UPS systems, the LSIC1MO120E0080-VB can be used in the rectifier and inverter stages, providing stable high-voltage switching capability to ensure efficient and reliable power backup during grid fluctuations or outages.
5. High-Voltage DC-DC Converters: This product is suitable for on-board DC-DC converters, telecom power supplies, and other high-voltage isolated power modules. Leveraging its excellent switching characteristics and low conduction losses, it can significantly improve the power density and operating efficiency of the converter.
6. Smart Grid & Power Electronic Transformers: In applications such as solid-state transformers and reactive power compensation devices in smart grids, this SiC MOSFET can withstand high voltage and high current surges, suitable for high-frequency power conversion and power quality control.
7. Wind Power Converters: This device can be used in the converter modules of wind power generation systems. As the core power switch of the grid-tied converter, it can adapt to harsh environments and reduce system losses, improving power generation efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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