中文
English
E3M0075120D-VB Product details
Back to previous pageProduct introduction：
You are designing a high-power-density industrial power supply system, facing a 1200V high-voltage bus, yet needing to achieve extremely low conduction losses and reliable switching performance simultaneously. Traditional silicon-based MOSFETs are no longer sufficient, and the VBsemi E3M0075120D-VB maximizes the advantages of Silicon Carbide (SiC) technology. It adopts a TO247 package, a single N-channel design, achieving an ultra-low on-resistance of 80mΩ even at a high withstand voltage of 1200V, and supports a continuous current output of 30A, making high-voltage power supply design more efficient, compact, and cooler.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | 80(mΩ) | SiC-S |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 1200V | 2~4 | 30A | SiC-S |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SIC |
- Withstand Voltage 1200V, easily handles high-voltage buses and transient surges
- Silicon Carbide (SiC-S) technology, extremely low switching losses, suitable for high-frequency applications
- Gate drive voltage range VGS supports -10V (negative voltage turn-off), combined with recommended 18V drive voltage, enabling fast and reliable switching
- Threshold voltage 2~4V, strong noise immunity, more flexible drive design
- On-resistance only 80mΩ (@VGS=18V), significantly reduces conduction losses, improving system efficiency
- Maximum continuous current 30A, TO247 package with excellent heat dissipation, suitable for high-power applications
Domain and module applications：
Electric Vehicle DC Charging Stations – Serves as the main switch in PFC or LLC topologies, utilizing SiC's low reverse recovery and low switching losses to improve overall efficiency and shorten charging time.
Photovoltaic Inverters – In DC bus systems above 1000V, the E3M0075120D-VB effectively reduces conduction and switching losses, improves MPPT conversion efficiency, and reduces heatsink size.
Industrial Switching Power Supplies / Server Power Supplies – Used in high-efficiency AC-DC or DC-DC stages, replacing traditional silicon MOSFETs to achieve higher power density and lower temperature rise.
Energy Storage Converters (PCS) – In bidirectional energy conversion scenarios, its symmetrical switching characteristics and low on-resistance help improve bidirectional efficiency and reduce system cost.
Rail Transit Auxiliary Converters – High reliability and withstand voltage capability meet stringent industrial environment requirements, ensuring long-term stable operation.
Active Filters / Reactive Power Compensation Devices – High-frequency, high-voltage switching capability makes it excel in power quality management, reducing filter size and improving dynamic response speed.
In a nutshell: The E3M0075120D-VB is not just an ordinary MOSFET; it is the 'SiC Core Engine' for your high-voltage, high-power designs, combining high efficiency, reliability, and miniaturization.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
